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Excitonic properties of type-I and type-II quantum wells
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10.1063/1.2723857
/content/aip/journal/jap/101/11/10.1063/1.2723857
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/11/10.1063/1.2723857

Figures

Image of FIG. 1.
FIG. 1.

Potential profile for type-I and type-II alignment with graded interfaces. The vertical lines indicate the limits of interfacial regions.

Image of FIG. 2.
FIG. 2.

(a) Binding energy and (b) total exciton energy of excitons in type-I QW as a function of the well width, using a 2D-like trial function and considering interface thickness of (solid line), (dotted line), (dashed line), and (dashed-dotted line).

Image of FIG. 3.
FIG. 3.

(a) Stark shift (solid line, square symbol), binding energy (dashed line, circle symbol), and total exciton energy (dotted line, triangle symbol) shifts as functions of the applied electric field, in type-I QW, considering abrupt (lines) and graded interfaces of thickness (symbols). (b) Exciton energy shift due to an electric field as a function of the QW width, considering interfaces thickness of (solid line) and (dotted line).

Image of FIG. 4.
FIG. 4.

Absolute values of the binding energies of type-II excitons in abrupt QW as a function of the QW width, for 2D (dotted line) and 3D (solid line) trial functions.

Image of FIG. 5.
FIG. 5.

(a) Absolute values of the binding energy and (b) total exciton energy of excitons in type-II QW as a function of the QW width, using a 3D-like trial function and considering interface thickness of (solid line), (dotted line), (dashed line), and (dashed-dotted line).

Image of FIG. 6.
FIG. 6.

Total exciton energy shift as a function of the electric field in type-II QW, for a well width of , considering abrupt (solid line) and (dotted line) interfaces, for applied magnetic field and .

Image of FIG. 7.
FIG. 7.

Total exciton energy shifts as a function of the magnetic field , for type-I (solid) and type-II QWs with 2D (dotted line) and 3D (dashed line) approximations, and a abrupt QW.

Image of FIG. 8.
FIG. 8.

Representation of the probability density distributions for a type-II wide abrupt QW, considering (a) and (b) , within the 2D approach. (c) and (d) are the results for the same magnetic fields, being considered a 3D-like trial function.

Tables

Generic image for table
Table I.

Material parameters for strain calculations in wells (Refs. 10, 17, and 32).

Generic image for table
Table II.

Selected properties of Si and Ge, which are used to obtain values for by linear interpolation (Refs. 10, 19, and 33).

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/content/aip/journal/jap/101/11/10.1063/1.2723857
2007-06-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excitonic properties of type-I and type-II Si∕Si1−xGex quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/11/10.1063/1.2723857
10.1063/1.2723857
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