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Optical phonons via oblique-incidence infrared spectroscopy and their deformation potentials in
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10.1063/1.2732681
/content/aip/journal/jap/101/11/10.1063/1.2732681
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/11/10.1063/1.2732681

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Calculated InP reflectance plotted vs wave number for the two polarizations at three angles of incidence and for two concentrations of free carriers: left panels ; right panels . The vertical scaling is the same for all plots. The high-frequency Brewster angle for this material is 72.2°.

Image of FIG. 2.
FIG. 2.

(Color online) Reflectance spectrum ( polarized), its derivative, and fits to both (solid lines) for of an epilayer sample at room temperature with .

Image of FIG. 3.
FIG. 3.

(Color online) Reflectance spectrum ( polarized), its derivative, and fits to both (solid lines) for of an epilayer sample at room temperature with .

Image of FIG. 4.
FIG. 4.

(Color online) Reflectance spectrum ( polarized), its derivative, and fits to both (solid lines) for of an epilayer sample at room temperature with .

Image of FIG. 5.
FIG. 5.

(Color online) Reflectance spectrum ( polarized), its derivative, and fits to both (solid lines) for of an epilayer sample at room temperature with .

Image of FIG. 6.
FIG. 6.

(Color online) Reflectance spectrum ( polarized), its derivative, and fits to both (solid lines) for of an epilayer sample at room temperature with .

Image of FIG. 7.
FIG. 7.

(Color online) Frequencies of optic modes in strained epilayers on heavily doped (circles) and semi-insulating (squares) InP(100) substrates. The (0) frequency values (diamonds) for the GaAs-like (InAs-like) TO and LO modes are calculated using the method of Ref. 17 from the corresponding bulk GaAs (InAs) frequencies given in Ref. 58. The solid, dashed, and dotted lines are, respectively, best fits to the frequency data for each mode using quadratic expressions for all modes [Eqs. (9)–(12)] and the random isodisplacement model [Eqs. (13) and (14)] and split quadratic expressions [Eqs. (19) and (20)] for the GaAs-like modes. Results of the revised model 1 fits to the InAs-like modes are shown by the dashed lines: In these fits, the frequencies are kept as fixed points.

Image of FIG. 8.
FIG. 8.

(Color online) Frequencies of the four optic modes in bulk , as measured by infrared and Raman spectroscopies (Ref. 34). The solid lines are best fits of quadratic equations [Eqs. (21)–(24)] to the frequency data for each mode where the frequencies of the InAs and GaAs modes have been fixed in the fits. Also shown (dashed lines) are the results of fits according to model 1. Results of the revised model 1 fits to the InAs-like modes are shown by the dotted lines: In these fits, the frequencies are kept as fixed points.

Image of FIG. 9.
FIG. 9.

(Color online) (a) The calculated strain-induced phonon frequency shifts according to model 1 and (b) the resulting deformation potentials for the GaAs-like and InAs-like modes of bulk .

Image of FIG. 10.
FIG. 10.

(Color online) Results of model 2 (solid lines) and model 3 (dashed lines) fits to the GaAs-like TO and LO modes of (a) strained and (b) bulk . Also shown (dotted lines) are the results of a free fit of model 3 [Eqs. (27) and (28)] to the bulk alloy frequencies.

Image of FIG. 11.
FIG. 11.

(Color online) (a) The calculated strain-induced phonon frequency shifts according to model 2 and (b) the resulting deformation potentials for the GaAs-like modes of bulk .

Image of FIG. 12.
FIG. 12.

(Color online) (a) The calculated strain-induced phonon frequency shifts according to model 3 and (b) the resulting deformation potentials for the GaAs-like modes of bulk .

Image of FIG. 13.
FIG. 13.

(Color online) (a) The calculated strain-induced phonon frequency shifts according to the revised model 1 and (b) the resulting deformation potentials for the InAs-like modes of bulk .

Tables

Generic image for table
Table I.

Parameters of epilayers on heavily doped InP(100) substrates determined by polarized IR reflectivity data and high-resolution x-ray diffraction. The phonon frequencies ( and ), damping factors ( and ), and thickness of the epilayer for the samples were obtained by fitting the -polarized IR reflectivity data. The 90% confidence limits from the fits are given in parentheses.

Generic image for table
Table II.

Optic phonon parameters and the high-frequency dielectric constant at room temperature for relevant III-V compounds taken from Palik (Ref. 56).

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/content/aip/journal/jap/101/11/10.1063/1.2732681
2007-06-11
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical phonons via oblique-incidence infrared spectroscopy and their deformation potentials in In1−xGaxAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/11/10.1063/1.2732681
10.1063/1.2732681
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