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High-frequency surface acoustic wave devices based on AlN/diamond layered structure realized using e-beam lithography
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10.1063/1.2739218
/content/aip/journal/jap/101/11/10.1063/1.2739218
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/11/10.1063/1.2739218
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction of AlN/diamond layered structure.

Image of FIG. 2.
FIG. 2.

Rocking curve of (002) AlN film orientation indicating a FWHM value of .

Image of FIG. 3.
FIG. 3.

Plane view of transmission electron microscope image shows the microstructure and grain size of AlN thin film.

Image of FIG. 4.
FIG. 4.

Atomic force microscope 3D image of AlN film surface exhibiting very low roughness.

Image of FIG. 5.
FIG. 5.

Frequency response of SAW device based on AlN/diamond layered structure with 250 nm IDTs lateral resolution. Inset, the SAW device frequency response achieved with 500 nm IDTs lateral resolution.

Image of FIG. 6.
FIG. 6.

Experimental (dots) and calculated (lines) phase velocity dispersion curve relative to achieved SAW devices.

Image of FIG. 7.
FIG. 7.

Experimental (black dots) and calculated (dashed line) electromechanical coupling coefficient dispersion curves of realized SAW devices.

Image of FIG. 8.
FIG. 8.

Experimental dispersion curve of temperature coefficient of frequency determined in the range of .

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/content/aip/journal/jap/101/11/10.1063/1.2739218
2007-06-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-frequency surface acoustic wave devices based on AlN/diamond layered structure realized using e-beam lithography
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/11/10.1063/1.2739218
10.1063/1.2739218
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