Magnetoresistance of an transistor for , 0.6, 0.8, and 0.9 V (bottom to top). The threshold voltage is 0.36 V. .
Magnetoresistance mobility as a function of for , , , , and (top to bottom). Solid lines are guides for the eye.
Scheme of the simulated structure (not to scale). Substrate doping: ; source and drain doping: ; pocket doping: ; gate/source and gate/drain overlap: 5 nm; source and drain length ( direction): 40 nm; source and drain depth ( direction): 25 nm; pocket length: 25 nm; pocket depth: 15 nm. Shaded areas denote metallic electrodes.
determined from Monte Carlo simulations for (squares), (circles), and (triangles). Dotted lines are guides for the eye taken from Fig. 2 for the same values of (top to bottom).
for different values of . The symbols and corresponding values are the same as in Fig. 4.
Mean free path for different values of . Symbols and corresponding values are the same as in Fig. 4. The solid line shows the dependence.
Average transit time from the source to the drain, , closed symbols, and average scattering time, , open symbols, as a function of . The symbols and corresponding values are the same as in Fig. 4.
Transmission coefficient as a function of . Phenomenological model of Ref. 33: (dashed line); (dotted line). Monte Carlo simulations: (squares); (triangles).
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