1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis
Rent:
Rent this article for
USD
10.1063/1.2739307
/content/aip/journal/jap/101/11/10.1063/1.2739307
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/11/10.1063/1.2739307
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Magnetoresistance of an transistor for , 0.6, 0.8, and 0.9 V (bottom to top). The threshold voltage is 0.36 V. .

Image of FIG. 2.
FIG. 2.

Magnetoresistance mobility as a function of for , , , , and (top to bottom). Solid lines are guides for the eye.

Image of FIG. 3.
FIG. 3.

Scheme of the simulated structure (not to scale). Substrate doping: ; source and drain doping: ; pocket doping: ; gate/source and gate/drain overlap: 5 nm; source and drain length ( direction): 40 nm; source and drain depth ( direction): 25 nm; pocket length: 25 nm; pocket depth: 15 nm. Shaded areas denote metallic electrodes.

Image of FIG. 4.
FIG. 4.

determined from Monte Carlo simulations for (squares), (circles), and (triangles). Dotted lines are guides for the eye taken from Fig. 2 for the same values of (top to bottom).

Image of FIG. 5.
FIG. 5.

for different values of . The symbols and corresponding values are the same as in Fig. 4.

Image of FIG. 6.
FIG. 6.

Mean free path for different values of . Symbols and corresponding values are the same as in Fig. 4. The solid line shows the dependence.

Image of FIG. 7.
FIG. 7.

Average transit time from the source to the drain, , closed symbols, and average scattering time, , open symbols, as a function of . The symbols and corresponding values are the same as in Fig. 4.

Image of FIG. 8.
FIG. 8.

Transmission coefficient as a function of . Phenomenological model of Ref. 33: (dashed line); (dotted line). Monte Carlo simulations: (squares); (triangles).

Loading

Article metrics loading...

/content/aip/journal/jap/101/11/10.1063/1.2739307
2007-06-14
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/11/10.1063/1.2739307
10.1063/1.2739307
SEARCH_EXPAND_ITEM