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The role of proximity caps during the annealing of UV-ozone oxidized GaAs
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10.1063/1.2740359
/content/aip/journal/jap/101/11/10.1063/1.2740359
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/11/10.1063/1.2740359

Figures

Image of FIG. 1.
FIG. 1.

High resolution Ga spectra show the effect of annealing on UV-ozone oxidized samples at for [(a) unannealed sample for comparison, (b) annealed with a GaAs cap, (c) annealed with a Si cap, and (d) annealed without a cap]. The presence of a peak originating from bulk GaAs in case of the sample annealed with a GaAs proximate cap is indicative of a decrease in the oxide layer thickness.

Image of FIG. 2.
FIG. 2.

High resolution As spectra from UV-ozone oxidized samples that have been annealed at for [(a) unannealed sample for comparison, (b) annealed with a GaAs cap, (c) annealed with a Si cap, and (d) annealed without a cap]. A strong peak from elemental As in the cases of annealing with a Si cap and without a cap points to a significant reaction taking place at the bulk-oxide interface.

Image of FIG. 3.
FIG. 3.

Change in relative atomic concentration of different species in the UV-ozone oxide layer before and after annealing at for under different capping conditions. Regardless of capping conditions, and completely disappear after annealing. Relative at. % of different species has been calculated by analyzing the percentile contribution of each species to the overall at. % presence of the corresponding element, as calculated from survey spectra (Table I).

Image of FIG. 4.
FIG. 4.

Relative atomic concentration of different species after annealing of Au coated UV-ozone oxide at for in which relative at. % of different species has been calculated by analyzing the percentile contribution of each species to the overall at. % presence of the corresponding element, as calculated from survey spectra (Table I). Irrespective of capping conditions, and have been completely desorbed from the sample.

Image of FIG. 5.
FIG. 5.

Schematic showing how the proximate caps used in annealing Au deposited UV-ozone oxide are separated from the oxide layer by a layer of Au that dewets the oxide layer during annealing, leading to the formation of Au nanoparticles.

Image of FIG. 6.
FIG. 6.

EDS-HRTEM obtained from a cross-sectional sample showing the formation of surface pits in the gold coated oxide layer during annealing. Pits have different depths and consist of elemental As and , with elemental As at the interface.

Tables

Generic image for table
Table I.

Atomic quantification based on XPS survey spectra from different samples. Series A comprises of the samples having only UV-ozone oxide, and series B comprises all the samples with Au layer. All UV-ozone oxides have a thickness of . Annealing took place at for . A thick Au film was e-beam evaporated on all samples in series B. Percentages given are at. %.

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/content/aip/journal/jap/101/11/10.1063/1.2740359
2007-06-14
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The role of proximity caps during the annealing of UV-ozone oxidized GaAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/11/10.1063/1.2740359
10.1063/1.2740359
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