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Ultraviolet semiconductor laser diodes on bulk AlN
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10.1063/1.2747546
/content/aip/journal/jap/101/12/10.1063/1.2747546
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/12/10.1063/1.2747546
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) AFM image of the polished Al-face surface of a near on-axis (0001) bulk AlN substrate. Atomic level steps are clearly seen in the scan. (b) AFM image of an AlN epilayer grown on near on-axis (0001) AlN substrate. (c) AFM images of an AlGaN layer grown on off-axis (0001) AlN substrate, and (d) nearly on-axis (0001) AlN substrate.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Schematic diagram of an InAlGaN heterostructure for a UV laser diode grown on a bulk AlN substrate. (b) Photograph of fully processed UV laser diodes fabricated on a 1-cm-diameter wafer of bulk AlN. The wafer contains several hundred gain-guided laser diodes.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Room-temperature emission spectra for a InGaN MQW laser diode on AlN substrate for different pulsed current densities below threshold. (b) TE and TM laser diode emission spectra for the same diode operating above threshold.

Image of FIG. 4.
FIG. 4.

(Color online) (a) High-resolution emission spectrum for a InGaN MQW laser diode operating slightly above threshold. (b) Room-temperature pulsed light-output vs current characteristic for a laser diode emitting at 371 nm.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Room-temperature emission spectra obtained from a series of optically pumped laser devices with different InAlGaN and AlGaN MQW active regions grown on bulk AlN substrates. (b) Threshold power densities for optically pumped lasers grown on sapphire (red dots) and AlN substrates (blue stars).

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/content/aip/journal/jap/101/12/10.1063/1.2747546
2007-06-20
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultraviolet semiconductor laser diodes on bulk AlN
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/12/10.1063/1.2747546
10.1063/1.2747546
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