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Heating-induced carrier accumulation in the optical confinement layer and the output power in broadened symmetric and narrow asymmetric waveguide laser diodes
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10.1063/1.2749464
/content/aip/journal/jap/101/12/10.1063/1.2749464
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/12/10.1063/1.2749464
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the refractive index profile and the waveguide mode profile, in the (a) BSW and (b) NAW structures.

Image of FIG. 2.
FIG. 2.

(a) Total internal loss and excess temperature evaluated from the experiment (Ref. 4) and (b) contributions to the internal loss in a BSW structure.

Image of FIG. 3.
FIG. 3.

(a) Excess temperature and background OCL carrier density in BSW and NAW structures. (b) Total internal loss and contributions to it as functions of current in the NAW structure.

Image of FIG. 4.
FIG. 4.

Light-current characteristic and the current dependence of the wall-plug efficiency in the BSW laser structure [from the experiment (Ref. 4)] and in the NAW laser structure (predicted).

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/content/aip/journal/jap/101/12/10.1063/1.2749464
2007-06-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Heating-induced carrier accumulation in the optical confinement layer and the output power in broadened symmetric and narrow asymmetric waveguide laser diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/12/10.1063/1.2749464
10.1063/1.2749464
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