Properties of the layers studied in this work as a function of the (5% in Ar) flow ratio: (a) atomic concentration as measured by XPS and (b) refractive index (–●–) and density (◆).
FTIR spectra ranging from of the PECVD SiON layers under study with increasing P doping.
The broad IR absorption band between 700 and for sample P-30. It is well fitted with ten Gaussian-shaped absorption bands.
Variation of the normalized absorption band area for PECVD SiON layers with increasing flow rate: (a) silicon related bonds and (b) phosphorus related bonds.
The hydrogen bond concentration and the optical loss of the as-deposited P-doped SiON layers as function of the 5% flow rate: (a) N–H and Si–H bond concentration and (b) optical loss as a function of wavelength.
Infrared absorption spectra of the N–H region for several annealing temperatures: (a) undoped SiON layer, sample P-00; (b) P-doped SiON layer, sample P-30. Temperatures have been indicated in the figure (for clarity the curves have been plotted with a vertical offset).
The hydrogen bond concentrations of the P-doped SiON layers (P-00 to P-30) as a function of annealing temperature: (a) N–H bond concentration and (b) Si–H bond concentration.
Optical loss as a function of wavelength for undoped and P-doped SiON layers annealed at for in atmosphere.
Energy of the infrared vibrational modes observed in undoped and P-doped PECVD silicon oxynitride layers.
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