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Reduction of hydrogen-induced optical losses of plasma-enhanced chemical vapor deposition silicon oxynitride by phosphorus doping and heat treatment
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10.1063/1.2423219
/content/aip/journal/jap/101/2/10.1063/1.2423219
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/2/10.1063/1.2423219

Figures

Image of FIG. 1.
FIG. 1.

Properties of the layers studied in this work as a function of the (5% in Ar) flow ratio: (a) atomic concentration as measured by XPS and (b) refractive index (–●–) and density (◆).

Image of FIG. 2.
FIG. 2.

FTIR spectra ranging from of the PECVD SiON layers under study with increasing P doping.

Image of FIG. 3.
FIG. 3.

The broad IR absorption band between 700 and for sample P-30. It is well fitted with ten Gaussian-shaped absorption bands.

Image of FIG. 4.
FIG. 4.

Variation of the normalized absorption band area for PECVD SiON layers with increasing flow rate: (a) silicon related bonds and (b) phosphorus related bonds.

Image of FIG. 5.
FIG. 5.

The hydrogen bond concentration and the optical loss of the as-deposited P-doped SiON layers as function of the 5% flow rate: (a) N–H and Si–H bond concentration and (b) optical loss as a function of wavelength.

Image of FIG. 6.
FIG. 6.

Infrared absorption spectra of the N–H region for several annealing temperatures: (a) undoped SiON layer, sample P-00; (b) P-doped SiON layer, sample P-30. Temperatures have been indicated in the figure (for clarity the curves have been plotted with a vertical offset).

Image of FIG. 7.
FIG. 7.

The hydrogen bond concentrations of the P-doped SiON layers (P-00 to P-30) as a function of annealing temperature: (a) N–H bond concentration and (b) Si–H bond concentration.

Image of FIG. 8.
FIG. 8.

Optical loss as a function of wavelength for undoped and P-doped SiON layers annealed at for in atmosphere.

Tables

Generic image for table
Table I.

Energy of the infrared vibrational modes observed in undoped and P-doped PECVD silicon oxynitride layers.

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/content/aip/journal/jap/101/2/10.1063/1.2423219
2007-01-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of hydrogen-induced optical losses of plasma-enhanced chemical vapor deposition silicon oxynitride by phosphorus doping and heat treatment
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/2/10.1063/1.2423219
10.1063/1.2423219
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