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Frequency response of solid-state impact ionization multipliers
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10.1063/1.2426376
/content/aip/journal/jap/101/2/10.1063/1.2426376
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/2/10.1063/1.2426376
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Example of SIM structure. This is a cross sectional view of a device made using a -type epitaxial layer on a substrate. The electron collector is the doped region and the hole sink is the doped substrate. This represents what is called a vertical device as excess holes are drawn vertically to the hole sink.

Image of FIG. 2.
FIG. 2.

Graph showing vs for a vertical device built using a -type epitaxial layer on a substrate. Current injection was done by illuminating a silicon photodiode connected to the SIM.

Image of FIG. 3.
FIG. 3.

Representation of a model SIM current vs voltage curve with the three important operating regions labeled.

Image of FIG. 4.
FIG. 4.

Representation of carrier action in the SIM when operating in region A. (a) Carrier action and semiconductor depletion in a cross section of a vertical SIM. (b) Band diagram representation of the metal-semiconductor interface and carrier action.

Image of FIG. 5.
FIG. 5.

Representation of carrier action in the SIM when operating in region B. (a) Carrier action and semiconductor depletion in a cross section of a vertical SIM. (b) Band diagram representation of the metal-semiconductor interface and carrier action.

Image of FIG. 6.
FIG. 6.

Representation of carrier action and semiconductor depletion in a cross section of a vertical SIM when operated in region C.

Image of FIG. 7.
FIG. 7.

Circuit model for a SIM connected to a photodiode current source when is greater than the depletion voltage. Note that is a dependent current source representing the impact ionization gain mechanism.

Image of FIG. 8.
FIG. 8.

Energy band diagram showing the barrier for electrons injected from a metal contact into a SIM built on a -type epitaxial layer. After the -type semiconductor between the metal and semiconductor is completely depleted, raising will lower the barrier as shown.

Image of FIG. 9.
FIG. 9.

Electric field vs position in the depleted region between metal-semiconductor contact and electron collector. As increases, the slope of the electric field remains constant and decreases.

Image of FIG. 10.
FIG. 10.

resistance vs input current between the metal-semiconductor and electron collector. The theoretical curve is calculated using (13) and (14) assuming a vertical SIM device made using a -type epitaxial layer, Schottky injection contact, and a spacing d equal to . Measured values correspond to fabricated SIM devices with those parameters.

Image of FIG. 11.
FIG. 11.

Test setup used to measure the frequency response of SIM devices.

Image of FIG. 12.
FIG. 12.

frequency response vs injected input current. Theoretical values were generated from (15) and measured values come from measurements on the same SIM device used to generate figure (-type semiconductor with Schottky injection).

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/content/aip/journal/jap/101/2/10.1063/1.2426376
2007-01-26
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Frequency response of solid-state impact ionization multipliers
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/2/10.1063/1.2426376
10.1063/1.2426376
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