Conductivity for (a) (G0) and (b) (Y) (both on the metallic side of the MIT) in the unannealed (UA) state and for various annealing temperatures to .
Conductivity for (a) (G1) and (b) (G2), both on the insulating side of the MIT in the UA state and for various annealing temperatures up to . Insets: expanded low , low scale showing metallic for and , respectively (temperature independent with finite at ).
Magnetoconductance (MG) vs at in the UA state and for various annealing temperatures to . ( as usually defined) for G0 ( Gd).
MG vs for in the UA state and for various annealing temperatures up to for G0 ( Gd). Inset: expanded scales for and .
for sample G0 ( Gd) measured at in the UA state and for various annealing temperatures up to as shown.
Magnetic susceptibility for sample G0 ( Gd) measured in on heating after zero field cooled (ZFC) for various annealing temperatures up to . in the field cooled (FC) state is identical to the ZFC data above a freezing temperature which is approximately the peak in the ZFC data shown.
High resolution cross section transmission electron microscopy (HR-XTEM) of annealed at (a) , (b) , and (c) . The circles show areas of nanocrystalline fringes. Lattice spacings are counted directly from such images and matched to known lattice spacings for Gd–Si compounds.
(Color online) (a) Annular dark field (ADF) image of annealed at . (b) Energy-dispersive X-ray (EDX) spectrum profile showing Gd and Si counts along the line shown in (a). Brighter regions in (a) correspond to Gd-rich (high ) regions in (b), darker ones correspond to Gd-depleted (low ) regions.
Article metrics loading...
Full text loading...