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Effects of annealing on amorphous near the metal-insulator transition
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10.1063/1.2426921
/content/aip/journal/jap/101/2/10.1063/1.2426921
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/2/10.1063/1.2426921
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Conductivity for (a) (G0) and (b) (Y) (both on the metallic side of the MIT) in the unannealed (UA) state and for various annealing temperatures to .

Image of FIG. 2.
FIG. 2.

Conductivity for (a) (G1) and (b) (G2), both on the insulating side of the MIT in the UA state and for various annealing temperatures up to . Insets: expanded low , low scale showing metallic for and , respectively (temperature independent with finite at ).

Image of FIG. 3.
FIG. 3.

Magnetoconductance (MG) vs at in the UA state and for various annealing temperatures to . ( as usually defined) for G0 ( Gd).

Image of FIG. 4.
FIG. 4.

MG vs for in the UA state and for various annealing temperatures up to for G0 ( Gd). Inset: expanded scales for and .

Image of FIG. 5.
FIG. 5.

for sample G0 ( Gd) measured at in the UA state and for various annealing temperatures up to as shown.

Image of FIG. 6.
FIG. 6.

Magnetic susceptibility for sample G0 ( Gd) measured in on heating after zero field cooled (ZFC) for various annealing temperatures up to . in the field cooled (FC) state is identical to the ZFC data above a freezing temperature which is approximately the peak in the ZFC data shown.

Image of FIG. 7.
FIG. 7.

High resolution cross section transmission electron microscopy (HR-XTEM) of annealed at (a) , (b) , and (c) . The circles show areas of nanocrystalline fringes. Lattice spacings are counted directly from such images and matched to known lattice spacings for Gd–Si compounds.

Image of FIG. 8.
FIG. 8.

(Color online) (a) Annular dark field (ADF) image of annealed at . (b) Energy-dispersive X-ray (EDX) spectrum profile showing Gd and Si counts along the line shown in (a). Brighter regions in (a) correspond to Gd-rich (high ) regions in (b), darker ones correspond to Gd-depleted (low ) regions.

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/content/aip/journal/jap/101/2/10.1063/1.2426921
2007-01-19
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of annealing on amorphous GdxSi1−x near the metal-insulator transition
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/2/10.1063/1.2426921
10.1063/1.2426921
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