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Low energy ion assisted deposition of films
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10.1063/1.2430705
/content/aip/journal/jap/101/2/10.1063/1.2430705
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/2/10.1063/1.2430705
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Figures

Image of FIG. 1.
FIG. 1.

Molecular dynamics simulation results for Cu films deposited on a Ta buffer layer using a simultaneous ion assistance method: (a) film packing density, (b) surface roughness, and (c) interfacial mixing as a function of assisting argon ion energies at a fixed ion-to-atom flux ratio and an ion incident angle of 45°.

Image of FIG. 2.
FIG. 2.

Simulation results for Cu films deposited on a Ta buffer layer using modulated energy and sequential ion assistance schemes: (a) film packing density, (b) surface roughness, and (c) interfacial mixing and surface roughness as a function of assisting argon ion energies at an ion incident angle of 45°.

Image of FIG. 3.
FIG. 3.

Schematic illustration of a biased target ion beam deposition system. A high flux, low voltage ion source is used to soft sputter a metal target. A hollow cathode electron source is used to form a low energy ion flux for ion assistance during or after metal deposition. It enables independent control of the ion energy, ion flux, and ion incident angle.

Image of FIG. 4.
FIG. 4.

film properties as a function of assisting argon ion energy using simultaneous ion beam assisted deposition at an ion-to-atom ratio of 4 and incident angle of 45°: (a) film surface roughness and (b) film electrical resistivity. An empirical structure function was deduced from simulation results and is shown as the solid curve in (b).

Image of FIG. 5.
FIG. 5.

film properties as a function of ion-to-atom flux ratio in simultaneous ion beam assisted deposition at an argon ion energy of and incident angle of 45°: (a) film surface roughness and (b) film electrical resistivity. Solid line in (b) is for structure function .

Image of FIG. 6.
FIG. 6.

Measured Auger electron spectrometer depth profiles of composition for ∕substrate films deposited using simultaneous argon ion assistance deposition at an incident angle of 45° with three different ion assistance conditions: no ion assistance, and ion-to-atom flux ratio of 5, and and ion-to-atom flux ratio of 14.

Image of FIG. 7.
FIG. 7.

High resolution TEM cross-section images of the bilayer interfaces deposited using different simultaneous ion assistance conditions at an incident angle of 45°: (a) no ion assistance, (b) and ion-to-atom flux ratio of 5, and (c) and ion-to-atom flux ratio of 14. The CuTa region in (c) consists of a heavily mixed solid state solution. Arrow pointed areas are CuTa regions in the figure.

Image of FIG. 8.
FIG. 8.

bilayer properties as a function of ion energy in modulated ion energy and sequential ion beam treatments: (a) film surface roughness and (b) film electrical resistivity. The ion-to-metal flux ratio was 6 in the modulated ion energy scheme and an ion density of was applied for about 30 and to the completed tantalum and copper surfaces, respectively, in the sequential ion assistance.

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/content/aip/journal/jap/101/2/10.1063/1.2430705
2007-01-23
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low energy ion assisted deposition of Ta∕Cu films
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/2/10.1063/1.2430705
10.1063/1.2430705
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