(a) A schematic diagram of the back-gated nanotube testing structure. (b) SEM image of an individual MWCNT aligned on top of two electrical contacts. (c) SEM image of an individual SWCNT positioned on the surface of two electrodes, which is verified by a high-magnification SEM image (d).
Illustration of the measured resistance consisting of intrinsic nanotube resistance and contact resistances between aligned nanotube and electrode surfaces.
behaviors of an individual SWCNT after different times of Joule heating process: (a) initial status without Joule heating process, (b) after one time of Joule heating, (c) after two times of Joule heating, and (d) after three times of Joule heating.
Comparative curves clearly indicate Joule heating process can decrease the barrier to carrier transport. After the Joule heating process, the curve displays linear characteristics (inset: SEM image of the SWCNT).
Histograms of decrease percentage of SWCNT contact resistance after (a) first sweep, (b) second sweep, (c) third sweep, and (d) fourth sweep.
curves of an individual MWCNT became linear after two times of Joule heating process (inset: SEM image of the MWCNT).
Histograms of decrease percentage of MWCNT contact resistance after (a) first sweep, (b) second sweep, (c) third sweep, and (d) fourth sweep.
Decrease percentages of contact resistances after first, second, third, and fourth Joule heating processes.
A comparison of decrease percentages of contact resistances after different processes.
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