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Surface treatment effect on temperature-dependent properties of heterobipolar transistors
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10.1063/1.2432310
/content/aip/journal/jap/101/3/10.1063/1.2432310
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2432310
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic structures of base surface treatments of the studied devices.

Image of FIG. 2.
FIG. 2.

Illustration of the base surface reaction after treatment.

Image of FIG. 3.
FIG. 3.

(a) Illustration drawing of a device without base surface passivation and band diagram near the base surface as indicated by cut A. (b) Illustration drawing of a device with emitter ledge passivation and band diagram through the emitter ledge as indicated by cut B.

Image of FIG. 4.
FIG. 4.

The common-emitter characteristics of the studied devices at different temperatures.

Image of FIG. 5.
FIG. 5.

The temperature dependences of base-emitter turn-on junction voltage of the studied devices.

Image of FIG. 6.
FIG. 6.

The leakage currents of the studied devices at different temperatures.

Image of FIG. 7.
FIG. 7.

Gummel plots of the studied devices at 300 and .

Image of FIG. 8.
FIG. 8.

dc gain vs collector current of the studied devices at different temperatures.

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/content/aip/journal/jap/101/3/10.1063/1.2432310
2007-02-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface treatment effect on temperature-dependent properties of InGaP∕GaAs heterobipolar transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2432310
10.1063/1.2432310
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