Schematic structures of base surface treatments of the studied devices.
Illustration of the base surface reaction after treatment.
(a) Illustration drawing of a device without base surface passivation and band diagram near the base surface as indicated by cut A. (b) Illustration drawing of a device with emitter ledge passivation and band diagram through the emitter ledge as indicated by cut B.
The common-emitter characteristics of the studied devices at different temperatures.
The temperature dependences of base-emitter turn-on junction voltage of the studied devices.
The leakage currents of the studied devices at different temperatures.
Gummel plots of the studied devices at 300 and .
dc gain vs collector current of the studied devices at different temperatures.
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