PL peak intensities of P-doped Si-nc’s as a function of P concentration. P concentration is changed from 0 to 1.9 at. %. In the inset, PL spectra of Si-nc’s for the samples with the Si concentration of 35.6 and 40.5 at. % are shown.
ESR spectra of P-doped Si-nc’s at 4.2 K. Lower part: Si concentration is 40.5 at. % and P concentration is changed from 0 to 1.9 at. %. Upper part: Si concentration is 35.6 at. % and P concentration is 1.5 at. %. For better comparison of the spectral shape, the spectra are scaled by the indicated multiplication factors.
Temperature dependence of ESR spectra. P concentration is (a) 1.0 and (b) 1.9 at. %. Si concentration is 40.5 at. %.
(a) Linewidth and (b) integrated intensity of the conduction electron signal as a function of temperature. The solid line in (a) represents linewidth of a conduction electron signal in P-doped bulk Si crystals. The solid curves in (b) are the results of fitting by the weighted sum of Curie and Pauli paramagnetism.
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