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Electron spin-resonance studies of conduction electrons in phosphorus-doped silicon nanocrystals
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10.1063/1.2432377
/content/aip/journal/jap/101/3/10.1063/1.2432377
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2432377
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL peak intensities of P-doped Si-nc’s as a function of P concentration. P concentration is changed from 0 to 1.9 at. %. In the inset, PL spectra of Si-nc’s for the samples with the Si concentration of 35.6 and 40.5 at. % are shown.

Image of FIG. 2.
FIG. 2.

ESR spectra of P-doped Si-nc’s at 4.2 K. Lower part: Si concentration is 40.5 at. % and P concentration is changed from 0 to 1.9 at. %. Upper part: Si concentration is 35.6 at. % and P concentration is 1.5 at. %. For better comparison of the spectral shape, the spectra are scaled by the indicated multiplication factors.

Image of FIG. 3.
FIG. 3.

Temperature dependence of ESR spectra. P concentration is (a) 1.0 and (b) 1.9 at. %. Si concentration is 40.5 at. %.

Image of FIG. 4.
FIG. 4.

(a) Linewidth and (b) integrated intensity of the conduction electron signal as a function of temperature. The solid line in (a) represents linewidth of a conduction electron signal in P-doped bulk Si crystals. The solid curves in (b) are the results of fitting by the weighted sum of Curie and Pauli paramagnetism.

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/content/aip/journal/jap/101/3/10.1063/1.2432377
2007-02-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron spin-resonance studies of conduction electrons in phosphorus-doped silicon nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2432377
10.1063/1.2432377
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