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Scanning tunneling microscope based fabrication of nano- and atomic scale dopant devices in silicon: The crucial step of hydrogen removal
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10.1063/1.2433138
/content/aip/journal/jap/101/3/10.1063/1.2433138
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2433138

Figures

Image of FIG. 1.
FIG. 1.

(Color online) STM-based fabrication of P dopant nanostructures. Each STM image shows the same region of the surface. (a) STM lithography of a wide DB wire. Black arrows indicate dimer vacancies and gray arrows indicate dangling bonds. (b) Phosphine dosing. The black arrows indicate PH, white arrows show , and gray arrows point to dangling bonds. (c) Phosphorus incorporation annealing ( at ). The white arrows indicate ejected one dimensional (1D) Si chains, while black arrows show incorporated P.

Image of FIG. 2.
FIG. 2.

(Color online) STM images of tip-based and thermal desorptions of hydrogen. (a) STM patterned P-doped line of width with hydrogen resist intact. (b) Region of the surface from (a) after thermal hydrogen desorption. High resolution close-up from (c) inside and (d) outside an incorporated line region. (e) Si(001) surface with 0.25 monolayer incorporated P. (f) Si(001) surface with no P after thermal hydrogen desorption. (g) STM patterned P-doped line of width with hydrogen resist intact. (h) Close-up from within the line region in (g). (i) Region of the surface shown in (g) after STM-stimulated hydrogen removal. (j) Close-up of the line in (i) corresponding to the same region as in (h).

Image of FIG. 3.
FIG. 3.

(Color online) Spatially resolved roughness analysis for thermal hydrogen desorption. (a) STM image of a wide phosphorus doped nanostructured line after thermal hydrogen desorption at . (b) Section through the spatially resolved roughness calculated from (a). A Gaussian fit to the roughness distribution at the line boundary is indicated by the broken red line in (a). The boundaries of the line before desorption are indicated by the dashed vertical lines.

Image of FIG. 4.
FIG. 4.

(Color online) Spatially resolved roughness analysis for STM tip-based hydrogen desorption. (a) STM image of an wide phosphorus doped nanostructured line after STM tip desorption. (b) Section through the spatially resolved roughness calculated from (a). A Gaussian fit to the roughness distribution at the line boundary is indicated by the broken red line in (a). The boundaries of the line before desorption are indicated by the dashed vertical lines.

Tables

Generic image for table
Table I.

Diffusion lengths obtained from spatially resolved roughness analysis for thermal and STM tip-induced desorptions. The width corresponds to the P-doped lines before desorption.

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/content/aip/journal/jap/101/3/10.1063/1.2433138
2007-02-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning tunneling microscope based fabrication of nano- and atomic scale dopant devices in silicon: The crucial step of hydrogen removal
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2433138
10.1063/1.2433138
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