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Effects of barrier growth temperature ramp-up time on the photoluminescence of quantum wells
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Image of FIG. 1.
FIG. 1.

QW growth parameters of S47, S48, and S49. The barrier and well growth temperatures are 850 and , respectively. Before the ramp-up process, GaN layer was deposited as a protection layer on the InGaN well. The followed ramp up time is 30, 60, and for S47, S48, and S49, respectively.

Image of FIG. 2.
FIG. 2.

PL spectra (solid line) and simulations (dash line) at (a) and (b) from S47, S48, and S49. FFT is introduced to eliminate the interference by filtering the high frequency parts of the PL spectra

Image of FIG. 3.
FIG. 3.

HRXRD Omega/2Theta scanning curves (thick line) and simulations (thin line) of S47 (a), S48 (b), and S49 (c).

Image of FIG. 4.
FIG. 4.

Temperature dependences of PL peak energy (a) and PL linewidth (b) from S47 (solid uptriangle), S48 (solid square), and S49 (solid circle).

Image of FIG. 5.
FIG. 5.

Schematic drawings of In-rich regions in InGaN wells [(a), (b), and (c)] and the corresponding in-plane energy bands [(e), (f), and (g)] for S47, S48, and S49.

Image of FIG. 6.
FIG. 6.

Temperature dependence of normalized integrated PL intensity from S47 (solid square), S48 (solid circle), and S49 (solid triangle). Their internal quantum efficiency is 3.2%, 7.7%, and 11.1% for S47, S48, and S49, respectively.


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Table I.

PL peak and full width at half maximum (FWHM) of samples S47, S48, and S49 at low temperature and room temperature.

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Table II.

Structural parameters of MQWs of S47, S48, and S49 determined by HRXRD.

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Table III.

The fitted results with respect to the experimental results of temperature-dependent PL integrated intensities for S47, S48, and S49.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN∕GaN quantum wells