Normalized drain current noise at plotted vs gate voltage overdrive for SOI and bulk Si . .
The simulated average carrier distance from the front gate oxide interface in the SOI plotted for different back gate voltages. SCHRED (Ref. 15) was used for the simulations with the following parameters: Doping Si (acceptor), front oxide , Si body , and buried oxide . The inset shows a schematic cross section of the SOI structure and the hole distribution in the Si body.
(Color online) Drain current noise power spectral density plotted vs frequency for the SOI biased at three different back gate voltages. .
Normalized drain current noise at plotted vs back gate voltage for the SOI . The drain current was held constant at 67, 123, or , which corresponded to a , 0.65, or , respectively, when .
(Color online) The extracted Hooge parameter studied vs the simulated average carrier-oxide distance for the SOI and bulk Si . The plotted data were obtained from different types of experiments where one or two terminal voltages were varied. The dotted line is a curve fit using the empirical equation with , , and .
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