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Effect of channel positioning on the noise in silicon-on-insulator metal-oxide-semiconductor field-effect transistors
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10.1063/1.2433772
/content/aip/journal/jap/101/3/10.1063/1.2433772
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2433772
/content/aip/journal/jap/101/3/10.1063/1.2433772
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/content/aip/journal/jap/101/3/10.1063/1.2433772
2007-02-13
2014-11-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of channel positioning on the 1∕f noise in silicon-on-insulator metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2433772
10.1063/1.2433772
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