1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Consequences of nonstochiometric interfacial layers on the electrical characterization of metal-oxide-semiconductor devices
Rent:
Rent this article for
USD
10.1063/1.2433998
/content/aip/journal/jap/101/3/10.1063/1.2433998
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2433998
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematics of (a) a MOS device with nonabrupt interfaces and (b) the profile of the oxygen molar fraction along the growth direction .

Image of FIG. 2.
FIG. 2.

Schematics of the conduction band profile across a MOS device in the presence of tunneling current density of electrons confined in the inversion layer ( states) through the gate contact. The substrate is oriented in such way that its crystallographic direction lies perpendicular to the oxide layer. The inset graph depicts the orientation of six energy valleys split in and bands.

Image of FIG. 3.
FIG. 3.

(a) Conduction band profile near the inversion layer of a MOS device with with abrupt (solid line) and nonabrupt interfaces and the following interface localization parameters: (dashed line), (dotted line), and (dash-dotted line). The applied gate voltage is . Inversion layer ground state wave functions are also displayed with the same line type. (b) Ground state energy dependence on the oxide thickness for abrupt (solid line) and nonabrupt interface widths of 0.3 nm (open symbols) and 0.5 nm (solid symbols). The used interface localizations parameters are (circle), (square), and (triangle).

Image of FIG. 4.
FIG. 4.

Dependence of the inversion charges per unit area on the gate voltage for MOS devices with and 2 nm and . The abrupt interface is represented by solid lines. The interface localization parameters are (circle), (square), and (triangle).

Image of FIG. 5.
FIG. 5.

Dependence of the normalized capacitance on the: (a) for abrupt (solid line) and nonabrupt interfaces thicknesses of 0.3 nm (open symbols) and 0.5 nm (solid symbols); (b) for oxide thicknesses of 1 and 2 nm. In both panels, the interface localization parameters are (circle), (square), and (triangle).

Image of FIG. 6.
FIG. 6.

Threshold voltage vs for abrupt (solid line) and nonabrupt interfaces with 0.3 nm (open symbols) and 0.5 nm (solid symbols). The interface localization parameters are indicated by (circle), (square), and (triangle).

Image of FIG. 7.
FIG. 7.

(Left axes) Effective oxide thickness vs (open symbols) for nonabrupt interfaces of (a) and (b). The perceptual variation of (solid symbols) is displayed in the right axis of both graphs. The abrupt interface (solid line) is also included for comparison. The interface localization parameters are (circle), (square), and (triangle).

Image of FIG. 8.
FIG. 8.

Comparison of the gate tunneling current in MOS devices between abrupt (solid lines) and nonabrupt interfaces. The results obtained for interface widths of 0.3 and 0.5 nm are shown in the upper and lower panels, respectively. The interface localization parameters are (circle), (square), and (triangle). For the sake of comparison, the gate tunneling currents for nonabrupt interfaces (and ) calculated with their respective are also displayed.

Image of FIG. 9.
FIG. 9.

(Color online) Comparison of the effective tunneling barrier (indicated by double arrows) felt by electrons confined in the ground state of the inversion layer.

Loading

Article metrics loading...

/content/aip/journal/jap/101/3/10.1063/1.2433998
2007-02-14
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Consequences of nonstochiometric SiOx interfacial layers on the electrical characterization of metal-oxide-semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2433998
10.1063/1.2433998
SEARCH_EXPAND_ITEM