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High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at
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10.1063/1.2434823
/content/aip/journal/jap/101/3/10.1063/1.2434823
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2434823
/content/aip/journal/jap/101/3/10.1063/1.2434823
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/content/aip/journal/jap/101/3/10.1063/1.2434823
2007-02-08
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2434823
10.1063/1.2434823
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