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High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at
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10.1063/1.2434823
/content/aip/journal/jap/101/3/10.1063/1.2434823
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2434823
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Calculated values of (a) the ground state exciton energy and (b) the relative inverse squared overlap integral as a function of well width for different indium fractions.

Image of FIG. 2.
FIG. 2.

AFM images of (a) and (b) epilayers and (c) and (d) multiple quantum well structures.

Image of FIG. 3.
FIG. 3.

TEM-HAADF images of (a) and (b) multiple quantum well structures. The insets show average line scan intensities of the first five QWs grown, indicating a more uniform thickness between InGaN wells in the sample with AlInGaN barriers.

Image of FIG. 4.
FIG. 4.

Normalized low temperature photoluminescence spectra of and multiple quantum well structures with well widths of .

Image of FIG. 5.
FIG. 5.

Normalized low temperature photoluminescence spectra of the multiple quantum well structures with well widths of 2.4, 2.1, 1.8, and .

Image of FIG. 6.
FIG. 6.

Photoluminescence decay curves at for the multiple quantum well structures with well widths of 2.4, 2.1, 1.8, and .

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/content/aip/journal/jap/101/3/10.1063/1.2434823
2007-02-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2434823
10.1063/1.2434823
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