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-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying flux ratios on -plane substrates
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10.1063/1.2435806
/content/aip/journal/jap/101/3/10.1063/1.2435806
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2435806
/content/aip/journal/jap/101/3/10.1063/1.2435806
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/content/aip/journal/jap/101/3/10.1063/1.2435806
2007-02-14
2014-11-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga∕N flux ratios on m-plane 4H-SiC substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2435806
10.1063/1.2435806
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