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Observation of ultrafast carrier dynamics in amorphous films induced by femtosecond laser pulses
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10.1063/1.2435819
/content/aip/journal/jap/101/3/10.1063/1.2435819
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2435819
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Change in transient reflectivity of amorphous films as a function of probe beam delay on a picosecond time scale. The pump laser wavelength was at 400 nm and laser fluence at , pulse duration of 130 fs. The inset shows the fit to the reflectivity changes of the fast component. A monoexponential fit gives the relaxation time of 1.9 ps.

Image of FIG. 2.
FIG. 2.

Change in transient reflectivity of amorphous films on nanosecond time scale. The pump laser wavelength was at 400 nm and laser fluence at , pulse duration of 130 fs. A monoexponential fit gives the relaxation time of 0.99 ns.

Image of FIG. 3.
FIG. 3.

Change in transient reflectivity of amorphous films induced by femtosecond laser pulses at different fluences: (a) ; (b) ; and (c) ; respectively. A monoexponential fit gives the relaxation time: (a) ; (b) ; and (c) .

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/content/aip/journal/jap/101/3/10.1063/1.2435819
2007-02-14
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2435819
10.1063/1.2435819
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