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Enhancement in the efficiency of light emission from silicon by a thin surface-passivating layer grown by atomic layer deposition at low temperature
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10.1063/1.2464190
/content/aip/journal/jap/101/3/10.1063/1.2464190
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2464190
/content/aip/journal/jap/101/3/10.1063/1.2464190
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/content/aip/journal/jap/101/3/10.1063/1.2464190
2007-02-15
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement in the efficiency of light emission from silicon by a thin Al2O3 surface-passivating layer grown by atomic layer deposition at low temperature
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2464190
10.1063/1.2464190
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