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Nucleation and growth of thin films deposited on glass by atmospheric pressure chemical vapor deposition
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10.1063/1.2472274
/content/aip/journal/jap/101/3/10.1063/1.2472274
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2472274
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of the titanium silicide thin films per unit thickness deposited for under different deposition temperatures at a total flow rate of , a mole ratio of of 3, and a flow rate of .

Image of FIG. 2.
FIG. 2.

FESEM micrographs of thin films deposited for at (a) , (b) , (c) , and (d) .

Image of FIG. 3.
FIG. 3.

FESEM micrographs of thin films deposited at for (a) , (b) , (c) , and (d) .

Image of FIG. 4.
FIG. 4.

XRD patterns of the thin films per unit thickness deposited at for (a) , (b) , (c) , and (d) . (e), (f), and (g) are the corresponding patterns of (b), (c) and d), respectively, without the involvement of the amorphous layer.

Image of FIG. 5.
FIG. 5.

Resistivity and thickness of the thin films deposited at as functions of deposition time. The resistivity is calculated by the crystalline thickness (viz. amorphous layer thickness is subtracted from the total thickness), except for the thin film of , whose resistivity is calculated by the total thickness.

Image of FIG. 6.
FIG. 6.

Stack model of crystalline particles in the thin films.

Image of FIG. 7.
FIG. 7.

(311) peak area of thin film per unit thickness as a function of deposition time at .

Image of FIG. 8.
FIG. 8.

Variation in thin film resistivity and (311) peak area with deposition temperatures for a fixed deposition time of .

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/content/aip/journal/jap/101/3/10.1063/1.2472274
2007-02-15
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nucleation and growth of TiSi2 thin films deposited on glass by atmospheric pressure chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/3/10.1063/1.2472274
10.1063/1.2472274
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