XRD patterns of the titanium silicide thin films per unit thickness deposited for under different deposition temperatures at a total flow rate of , a mole ratio of of 3, and a flow rate of .
FESEM micrographs of thin films deposited for at (a) , (b) , (c) , and (d) .
FESEM micrographs of thin films deposited at for (a) , (b) , (c) , and (d) .
XRD patterns of the thin films per unit thickness deposited at for (a) , (b) , (c) , and (d) . (e), (f), and (g) are the corresponding patterns of (b), (c) and d), respectively, without the involvement of the amorphous layer.
Resistivity and thickness of the thin films deposited at as functions of deposition time. The resistivity is calculated by the crystalline thickness (viz. amorphous layer thickness is subtracted from the total thickness), except for the thin film of , whose resistivity is calculated by the total thickness.
Stack model of crystalline particles in the thin films.
(311) peak area of thin film per unit thickness as a function of deposition time at .
Variation in thin film resistivity and (311) peak area with deposition temperatures for a fixed deposition time of .
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