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Conductors, semiconductors, and insulators irradiated with short-wavelength free-electron laser
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10.1063/1.2434989
/content/aip/journal/jap/101/4/10.1063/1.2434989
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/4/10.1063/1.2434989

Figures

Image of FIG. 1.
FIG. 1.

(Color online) FEL-induced modification of monocrystalline silicon surfaces imaged by Nomarski microscopy.

Image of FIG. 2.
FIG. 2.

Raman spectra measured at different places on a FEL-irradiated sample of monocrystalline Si (dotted line, unirradiated surface; solid line, crater rim; and dashed line, crater center).

Image of FIG. 3.
FIG. 3.

AFM measurements of the silicon (a) and quartz (b) samples. Irradiation conditions were similar (fluence ).

Image of FIG. 4.
FIG. 4.

Profiles of the craters shown in Fig. 3 for silicon (a) and quartz (b).

Image of FIG. 5.
FIG. 5.

Ablation rates in quartz irradiated by FEL radiation as a function of laser fluence. Full circles, 67 shots accumulated; open circles, 22 shots accumulated; and triangles, the XUV-ABLATOR simulation.

Image of FIG. 6.
FIG. 6.

The energy spectra of ions taken with the TOF spectrometer for the silicon (a) and quartz (b) samples. Signals have been normalized. The energy scale has been divided by the ions’ charge state. Irradiation conditions were similar in both cases (fluence ).

Tables

Generic image for table
Table I.

Surface modification thresholds of various materials exposed to TTF1-FEL pulses.

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/content/aip/journal/jap/101/4/10.1063/1.2434989
2007-02-23
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Conductors, semiconductors, and insulators irradiated with short-wavelength free-electron laser
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/4/10.1063/1.2434989
10.1063/1.2434989
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