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Strain-induced electronic energy changes in multilayered quantum wire structures
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10.1063/1.2437574
/content/aip/journal/jap/101/4/10.1063/1.2437574
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/4/10.1063/1.2437574

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM images of the uncovered (a) QWR sample and (b) QDC sample. The upper panel is the shape of the cross section of wires at the position of the line in (a).

Image of FIG. 2.
FIG. 2.

The CER spectra (dashed) of the (a) QDC and (b) QWR samples measured at low temperatures. The quantum confinement transition energies are obtained by using the first derivative Lorentzian profile for QDCs and the Gaussian profile for QWRs (solid lines).

Image of FIG. 3.
FIG. 3.

The CER spectra of the QDC sample measured from the backside of the sample with (solid) and without (dashed) epitaxtial layers. The band gap of the unstrained GaAs substrate is determined to be at and at , as indicated by the arrows. The spectrum at is shifted upward for clarity.

Image of FIG. 4.
FIG. 4.

The CER spectra (dashed) of the (a) QWR sample and the (b) QDC sample in the energy range of GaAs absorption at low temperature and at room temperature . The arrows indicate the transition energies obtained through fitting by using Lorentzian profile , with . The band-gap energies [ at and at ] of unstrained GaAs are used in the fitting. The spectrum of the QWR sample is shifted upward for clarity.

Image of FIG. 5.
FIG. 5.

The SPV spectra of (a) the QDC and (b) the QWR samples measured at higher temperatures. The insets show the first derivative of the SPV signals. The band gap of unstrained GaAs is indicated by the arrows in the insets.

Tables

Generic image for table
Table I.

Various transition energies obtained by fitting the experimental CER curves using the Gaussian profile for the QWR sample and Lorentzian profiles for the QDC sample. The calculated values are obtained in the case of quantum well using the envelope-function model (Ref. 1). In the calculation, , , , and . All values for InGaAs are obtained by linear extrapolation between GaAs and InAs. The lattice mismatches between and GaAs are 2.1% and 3.2% for and 0.45, respectively.

Generic image for table
Table II.

Transition energies obtained from the fitting CER spectra by using the Lorentzian profiles in the energy range of the GaAs band gap. (GaAs) is the band gap of bulk GaAs, which was obtained from the CER at in Fig. 2(a). The experimental band-gap change , the average (fundamental) band-gap change , and the VB splitting are also computed.

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/content/aip/journal/jap/101/4/10.1063/1.2437574
2007-02-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain-induced electronic energy changes in multilayered InGaAs∕GaAs quantum wire structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/4/10.1063/1.2437574
10.1063/1.2437574
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