(a) FE-SEM image of ZnO NWs grown on a sapphire substrate (tilted view). (b) HR-TEM image of an individual ZnO nanowire showing its  preferred growth direction. The inset shows a selected-area electron diffraction pattern. (c) X-ray diffraction spectrum of the ZnO NWs. (d) PL emission spectrum showing a strong emission at .
(Color online) (a) Typical characteristics of a ZnO NW FET at gate biases of 0, 2, 4, 6, and measured at room temperature and under a vacuum of . The inset shows a SEM image of a typical ZnO NW FET device. (b) Semilogarithmic (left axis) and linear (right axis) plots of the characteristic of the same device at a drain bias of .
(Color online) (a) Typical normalized drain current noise power spectra at gate biases from measured in the vacuum. and the frequency range is from . The dashed line indicates the ideal dependence. (b) Noise amplitude obtained from Fig. 2(a) and Eq. (2) plotted as a function of the drain current. The numbers in the plot are the gate biases. .
(Color online) Normalized drain current noise power spectra at different drain biases from with a step of . The gate bias is kept at . The inset shows the noise amplitude as a function of drain current at different drain biases (the line is a guide to the eye).
(Color online) (a) The inverse of the noise amplitude plotted as a function of . The solid line is a linear fit to the data (squares). Hooge’s constant is calculated from the slope of the linear fit. (b) Summary plot of Hooge’s constant obtained in this study (black square) with previously published data for poly-silicon gate/, metal gate/, and single-wall nanotube FET devices. Different values of the same type of device are from different reports. The dash-dotted line shows the ITRS requirement on for the technology node.
(Color online) (a) characteristics of the ZnO NW FET device in vacuum and dry oxygen environments. . (b) Noise amplitude as a function of drain current under different gate biases in vacuum and the oxygen environments. .
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