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Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction
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10.1063/1.2422902
/content/aip/journal/jap/101/5/10.1063/1.2422902
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/5/10.1063/1.2422902
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Figures

Image of FIG. 1.
FIG. 1.

(a) RHEED pattern measured for the SiC substrate, along the azimuth, and (b) corresponding experimental (open circles) and fitted (solid lines) averaged RHEED intensity profile along the direction. The fits were horizontally shifted for clarity.

Image of FIG. 2.
FIG. 2.

(a) RHEED pattern measured for GaN at time , along the azimuth, corresponding experimental (open circles), and fitted (solid lines) averaged RHEED intensity profile along the [0001] (b) and (c) directions. The fits were shifted for clarity. The white lines in (a) show the range that was used to average the RHEED intensity for (b) and (c).

Image of FIG. 3.
FIG. 3.

In- and out-of-plane lattice parameters of the GaN plane, as deduced from the RHEED patterns, as a function of time. See text for details. The out-of-plane lattice parameter was averaged over 0.8 s. The horizontal line represents the out-of-plane lattice parameter of biaxially strained GaN pseudomorphic on AlN.

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/content/aip/journal/jap/101/5/10.1063/1.2422902
2007-03-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/5/10.1063/1.2422902
10.1063/1.2422902
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