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Thermal stability studies of fully silicided NiSi on Si-oxynitride and Hf-based high- gate stacks
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10.1063/1.2434808
/content/aip/journal/jap/101/5/10.1063/1.2434808
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/5/10.1063/1.2434808

Figures

Image of FIG. 1.
FIG. 1.

GIXRD results for FUSi stacks after (a) annealing and (b) after deuterated forming gas annealing.

Image of FIG. 2.
FIG. 2.

HRTEM images of (a) as-received , (b) after annealing, (c) after forming gas annealing, (d) after forming gas annealing, and (e) the interfacial region of (d). After Ref. 16.

Image of FIG. 3.
FIG. 3.

Back side SIMS analysis of Ni depth profile for NiSi-capped stacks before and after RTA annealing for (a) structures (stack “A”) and (b) (100) (stack “B”).

Image of FIG. 4.
FIG. 4.

Back side SIMS analysis of Ni depth profiles for (a) structures (stack A) and (b) (stack B) after furnace annealing in a ambient. After Ref. 16.

Image of FIG. 5.
FIG. 5.

Back side SIMS analysis of Ni depth profiles for FUSI NiSi stacks on thin body SOI substrate with a SiON dielectric layer after silicidation and postsilicidation annealing at for (stack “C”). After Ref. 16.

Image of FIG. 6.
FIG. 6.

Ni depth profiles for FUSI NiSi stacks on thin body SOI substrate after silicidation and annealing (a) (stack “D”) and (b) (stack “E”).

Image of FIG. 7.
FIG. 7.

Ni depth profiles for FUSI NiSi stacks on thin body SOI substrate for (a) as-received stacks and (b) after silicidation (RTA annealing for at ).The gate dielectric layer is (stack D).

Tables

Generic image for table
Table I.

The information of gate stacks for Ni diffusion studies. All electrodes are FUSI NiSi.

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/content/aip/journal/jap/101/5/10.1063/1.2434808
2007-03-02
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal stability studies of fully silicided NiSi on Si-oxynitride and Hf-based high-κ gate stacks
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/5/10.1063/1.2434808
10.1063/1.2434808
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