Laser interferometer measuring principle. The substrate and III-Nitrides epistructure refractive indexes are changes due to the device self-heating. A probe beam (1) and a reference beam (2) are combined in an interferometer. The phase of the probe beam changes due to the self-heating effect (exaggerated for visibility).
Micro-Raman measurements of the temperature discontinuity at the GaN/Si interface in the steady state in AlGaN/GaN/Si TLM structure.
Comparison of calculated with experimental TIM for in AlGaN/GaN/SiC TLM structure for (a) , (b) , , and (c) , . are calculated also for SiC and GaN.
Comparison of calculated (with and without considering TBR) and experimental in AlGaN/GaN/SiC TLM structure. “True” obtained from the electrical measurement is also shown.
Comparison of calculated (with and without considering TBR) and experimental in AlGaN/GaN/sapphire TLM structure. The dissipated power was .
Calculated steady-state temperature cross-section profiles in TLM structures on different substrates. Profiles are calculated for with , , and without considering TBR.
Thermo-optical parameters used in the thermal modeling.
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