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Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods
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10.1063/1.2435799
/content/aip/journal/jap/101/5/10.1063/1.2435799
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/5/10.1063/1.2435799

Figures

Image of FIG. 1.
FIG. 1.

Laser interferometer measuring principle. The substrate and III-Nitrides epistructure refractive indexes are changes due to the device self-heating. A probe beam (1) and a reference beam (2) are combined in an interferometer. The phase of the probe beam changes due to the self-heating effect (exaggerated for visibility).

Image of FIG. 2.
FIG. 2.

Micro-Raman measurements of the temperature discontinuity at the GaN/Si interface in the steady state in AlGaN/GaN/Si TLM structure.

Image of FIG. 3.
FIG. 3.

Comparison of calculated with experimental TIM for in AlGaN/GaN/SiC TLM structure for (a) , (b) , , and (c) , . are calculated also for SiC and GaN.

Image of FIG. 4.
FIG. 4.

Comparison of calculated (with and without considering TBR) and experimental in AlGaN/GaN/SiC TLM structure. “True” obtained from the electrical measurement is also shown.

Image of FIG. 5.
FIG. 5.

Comparison of calculated (with and without considering TBR) and experimental in AlGaN/GaN/sapphire TLM structure. The dissipated power was .

Image of FIG. 6.
FIG. 6.

Calculated steady-state temperature cross-section profiles in TLM structures on different substrates. Profiles are calculated for with , , and without considering TBR.

Tables

Generic image for table
Table I.

Thermo-optical parameters used in the thermal modeling.

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/content/aip/journal/jap/101/5/10.1063/1.2435799
2007-03-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/5/10.1063/1.2435799
10.1063/1.2435799
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