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Properties of nanostructured Ge produced by laser-induced air breakdown processing
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10.1063/1.2435801
/content/aip/journal/jap/101/5/10.1063/1.2435801
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/5/10.1063/1.2435801
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM images of the treated Ge surface after 900 laser shots. (a) Central region, magnification of and (b) peripheral region, magnification of .

Image of FIG. 2.
FIG. 2.

High-resolution XPS spectrum from the breakdown-treated Ge surface after 900 pulses.

Image of FIG. 3.
FIG. 3.

Photoacoustic FTIR spectrum from the breakdown-processed Ge surface after 900 pulses.

Image of FIG. 4.
FIG. 4.

Typical XRD spectra before (a) and after (b) the breakdown processing of a Ge wafer. To enhance XRD signal, a rectangular area with dimensions of was treated on the wafer by shifting the laser beam over the target. (c) Typical TEM image of slice of a Ge wafer near the treated area.

Image of FIG. 5.
FIG. 5.

Typical photoluminescence spectrum from the central part of Ge-based layer fabricated by the breakdown processing of a Ge wafer by 900 laser shots.

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/content/aip/journal/jap/101/5/10.1063/1.2435801
2007-03-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of nanostructured Ge produced by laser-induced air breakdown processing
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/5/10.1063/1.2435801
10.1063/1.2435801
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