SEM images of the treated Ge surface after 900 laser shots. (a) Central region, magnification of and (b) peripheral region, magnification of .
High-resolution XPS spectrum from the breakdown-treated Ge surface after 900 pulses.
Photoacoustic FTIR spectrum from the breakdown-processed Ge surface after 900 pulses.
Typical XRD spectra before (a) and after (b) the breakdown processing of a Ge wafer. To enhance XRD signal, a rectangular area with dimensions of was treated on the wafer by shifting the laser beam over the target. (c) Typical TEM image of slice of a Ge wafer near the treated area.
Typical photoluminescence spectrum from the central part of Ge-based layer fabricated by the breakdown processing of a Ge wafer by 900 laser shots.
Article metrics loading...
Full text loading...