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Photoacoustic characterization of carbon nanotube array thermal interfaces
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10.1063/1.2510998
/content/aip/journal/jap/101/5/10.1063/1.2510998
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/5/10.1063/1.2510998

Figures

Image of FIG. 1.
FIG. 1.

SEM images of a CNT array synthesized on a Si substrate. (a) A 30°-tilted plane, top view of the vertically oriented and dense CNT array. The array height is estimated to be . The CNT array has a part across the top of the image that helps illustrate the uniformity of growth. (b) An image with higher magnification showing individual CNTs. CNT diameters range from .

Image of FIG. 2.
FIG. 2.

SEM images of a CNT array synthesized on a pure Cu sheet. (a) Cross-section view of the vertically oriented and dense CNT array. The array height is estimated to be approximately ; the inset shows the CNT array grown on a tall Cu bar from previous work (Ref. 15). (b) An image with higher magnification showing individual CNTs. The CNT diameters range from .

Image of FIG. 3.
FIG. 3.

(Color online) Schematic of the sample assemblies during PA measurement. (a) The CNT array is not considered a layer in the PA model, but rather as a contributor to the interface resistance between the Si wafer and the Ag foil, . (b) The CNT array is considered a layer in the PA model; therefore, the component resistances and and the thermal diffusivity of the CNT array can be estimated. (c) The CNT arrays are not considered as layers in the PA model, but rather as contributors to the interface resistance between the Si wafer and the Cu sheet, . (d) The CNT arrays are considered as layers in the PA model; therefore, the component resistances , , and and the thermal diffusivity of each CNT array can be estimated.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic diagram of the PA apparatus.

Image of FIG. 5.
FIG. 5.

(Color online) Sensitivity calculations performed by varying the magnitude of the total CNT interface resistance in the PA model and calculating a theoretical phase shift at different heating frequencies. The limits are identified as the resistances at which additional changes in resistance alter the calculated phase shift little such that further changes fall within experimental uncertainty. (a) Sensitivity for the one-sided CNT sample structure. Upper and lower measurement limits are and , respectively. (b) Sensitivity for the two-sided CNT sample structure. Upper and lower measurement limits are and , respectively.

Image of FIG. 6.
FIG. 6.

(Color online) Phase shift as a function of modulation frequency for CNT interfaces with an applied contact pressure of . The mean-square deviation of all fits is approximately 0.3° in phase shift. (a) Lumped one-sided interface fitting results. (b) Resolved one-sided interface fitting results. (c) Lumped two-sided interface fitting results. (d) Resolved two-sided interface fitting results. The two-sided fitting data are typical of measurements at each pressure.

Image of FIG. 7.
FIG. 7.

(Color online) Thermal resistance as a function of pressure for a two-sided CNT interface measured with the PA method and the 1D reference bar method of Ref. 15.

Tables

Generic image for table
Table I.

One-sided CNT interface results.

Generic image for table
Table II.

Two-sided CNT interface results.

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/content/aip/journal/jap/101/5/10.1063/1.2510998
2007-03-12
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoacoustic characterization of carbon nanotube array thermal interfaces
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/5/10.1063/1.2510998
10.1063/1.2510998
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