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Effect of polarization and self-energy on the ground donor state in the presence of conduction band nonparabolicity in GaAs–(Al,Ga)As spherical quantum dot
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10.1063/1.2511785
/content/aip/journal/jap/101/5/10.1063/1.2511785
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/5/10.1063/1.2511785
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Ground state electron energy as a function of the size of a QD having potential barriers of (a) , (b) , (c) , and (d) infinite in the presence (solid) and absence (broken) of conduction band nonparabolicity.

Image of FIG. 2.
FIG. 2.

Ground state donor binding energy as a function of the size of a QD having potential barriers of (a) , (b) , and (c) , taking the effects of polarization charge and self-energy into consideration, with (solid) and (broken).

Image of FIG. 3.
FIG. 3.

Ground state donor binding energy as a function of the size of a QD having potential barriers of (a) and (b) infinite in the presence of the effect of (i) conduction band nonparabolicity only, (ii) both band nonparabolicity and polarization charge, and (iii) band nonparabolicity, polarization, and self-energy.

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/content/aip/journal/jap/101/5/10.1063/1.2511785
2007-03-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of polarization and self-energy on the ground donor state in the presence of conduction band nonparabolicity in GaAs–(Al,Ga)As spherical quantum dot
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/5/10.1063/1.2511785
10.1063/1.2511785
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