Chemical structure of poly(2,5-bis(3-hexadecylthiophene-2-yl) thienothiophene) (PB16TTT).
(Color) AFM images of the surface of the PB16TTT semiconducting polymer layer formed on the surfaces (a) before annealing and (b) after annealing, and (c) formed on the Au electrode after annealing. Cross sectional views and distributions of the heights of each AFM image. (d) Schematic illustration of the polymer molecular steps in the PB16TTT semiconducting polymer layer.
Dependences of the contact angles of water droplets and -dichlorobenzene (ODCB) droplets on the OTS-treatment time of surfaces.
(Color online) Out-of-plane x-ray diffraction patterns of PB16TTT semiconducting polymer layers formed on untreated and treated with OTS for 30 and after annealing in the liquid-crystalline phase. Inset: dependence of the (100) peak intensity on OTS-treatment time.
(Color online) (a) Dependence of mobilities on OTS-treatment time. (b) Transfer and (c) output characteristics of the polymer film formed on the gate insulating layer treated with OTS for .
(Color online) (a) Mobilities for repeated stressing in ambient air where was and was swept back and forth repeatedly between 20 and . (b) Transfer characteristics of scan numbers 10, 200, and 1000.
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