(Color online) dependences and fitting curve for SIFS-JJs. F layer thicknesses chosen as and in stepped JJs yields 0–0 coupled junction with asymmetry in (dotted lines) or symmetric junction (dashed lines). Data from Ref. 13.
(Color online) The complete SIFS stack was protected in part by photoresist. The Cu layer was necessary for uniform current transport: (a) reactive etching of with down to the layer, (b) ion etching of to set 0 coupling, and (c) in situ deposition of the cap layer. Schematic layouts of stepped JJ based on SFS/SIFS technology (d) and of stepped JJ along with planar reference junctions (e). The F layer (blue) thickness increases from left to right.
(Color online) Topography of test sample with multiple steps and wide gaps after etching and deposition. (a) SEM image before removal of photoresist (protecting coupled parts); (b) AFM image after removal of photoresist; and (c) profile measured by AFM (dotted line).
(Color online) of etched (star) and nonetched (dots) JJs. The insets show IVCs for small and large bias current ranges in zero magnetic field. Both JJs are in the short JJ limit. Measurements were done at 4.2 K.
(Color online) Calculated dependence for various ratios of and centered step in the profile.
(Color online) of a stepped 0–0 JJs (square shaped with junction length) with and (determined from reference JJs) plus calculated . The junction is in the short JJ limit.
Deposition (direct current sputtering) and etching parameters for SIFS stacks. The rates were determined by profiler measurements.
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