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Interaction of intrinsic defects with impurities in Al doped ZnSe single crystals
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10.1063/1.2712147
/content/aip/journal/jap/101/6/10.1063/1.2712147
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/6/10.1063/1.2712147

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of the free electron concentration in crystals annealed in . Inserted is the dependence of electron concentration upon the Al content in the melt. The dash line represents the value of the electron concentration for a crystal annealed in a pure Zn melt.

Image of FIG. 2.
FIG. 2.

Temperature dependence of the electrical conductivity in crystals annealed in . Inserted is the dependence of electrical conductivity upon the Al content in the melt. The dash line represents the value of the electrical conductivity for a crystal annealed in a pure Zn melt.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the Fermi level in crystals annealed in . Inserted is the dependence of Fermi level upon the Al content in the melt and upon the free electron concentration.

Image of FIG. 4.
FIG. 4.

PL spectra of and with different impurity concentration. .

Image of FIG. 5.
FIG. 5.

PL spectra of (1), (2) and (3–5) in the region of the fundamental absorption edge. Al: 3–0.1; 4–0.3; 5–1. .

Image of FIG. 6.
FIG. 6.

The influence of temperature upon the exciton PL spectra of crystals. Inserted is the temperature dependence of the exciton PL band maxima. Dash lines represent the experimental data, while solid lines are for results of calculations.

Image of FIG. 7.
FIG. 7.

High temperature spectra of near-band-gap luminescence of (1) and (2–5) crystals. Al: 2–0.1; 3–0.3; 4–1; 5–1. .

Image of FIG. 8.
FIG. 8.

DAP and FB luminescence spectra of (1) and (2–4) crystals. Al: 2–0.1; 3–0.3; 4–1. .

Image of FIG. 9.
FIG. 9.

The influence of temperature upon the DAP luminescence spectrum of a crystal. Inserted is the temperature dependence of the near-band-gap PL band maxima of a crystal. Dash lines represent the experimental data, while solid lines are for results of calculations.

Image of FIG. 10.
FIG. 10.

The spectra of activated and self-activated photoluminescence of crystals. .

Image of FIG. 11.
FIG. 11.

High temperature spectra of activated and self-activated photoluminescence of crystals. .

Image of FIG. 12.
FIG. 12.

The influence of temperature upon the activated luminescence spectrum of a crystal. Inserted is the temperature dependence of the energy position and the full width at half maximum for the red emission band.

Tables

Generic image for table
Table I.

Electrical parameters of Al single crystals.

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/content/aip/journal/jap/101/6/10.1063/1.2712147
2007-03-30
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interaction of intrinsic defects with impurities in Al doped ZnSe single crystals
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/6/10.1063/1.2712147
10.1063/1.2712147
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