In situ measurements regarding (a) system and (b) system at different final annealing temperatures.
Ex situ measurements of the annealed samples. The presence of the Mo interlayer results in a more stable system with a lower sheet resistance increase.
Ex situ plan-view TEM analysis of a NiSi layer after (a) , (b) , and (c) annealing temperatures. The latter sample shows a large grain.
In situ plan-view TEM analysis of (a) NiSi after at , (b) NiSi after at , (c) NiSi after at , (d) NiSi(Mo) after at , (e) NiSi(Mo) after at , and (f) NiSi(Mo) after at .
(a) Hole density and (b) dimension of sample plotted against the annealing time for 500, 540, and annealing temperatures.
(a) Hole density and (b) dimension of samples plotted against the annealing time for different temperatures.
Hole density saturation values as a function of the temperature for (dashed curve) and (continuous curve) samples.
Trends of hole growth rate in both the (a) and (b) systems.
as a function of time for (a) and (b) samples.
The saturation values vs the activation energy of hole nucleation for (dashed line) and (continuous line) samples are plotted.
curves obtained with [(a) and (c)] the modified model and [(b) and (d)] pure Srolovitz for and samples, respectively.
Ratio trends relative to (a) and (b) . In the inset in (b) the trend relative to process temperature is shown.
Plan-view TEM micrographs of a (a) and (b) samples annealed at . Transrotational structures are marked in the inset and represented by a cross (bending borders).
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