FTIR absorption spectrum of an oxygen-rich GaAs sample at low temperature.
Axial intensity distribution of the LVM bands observable in a very oxygen-rich ingot.
Axial intensity distribution of the LVM bands observable in an ingot with medium oxygen concentration.
Integrated absorption of bands A and B before (“dark”) and after optically induced conversion (“illum.”).
Analysis of the difference in intensity of bands A and B and the carbon acceptor concentration in the seed end of ingot No. 30772.
Fine structure of the bands A and B as a function of temperature. Spectra are shifted vertically for clarity.
Integrated absorption of the bands A and B as a function of temperature. Solid curves serve merely as a guide for the eye.
Free carrier concentration as a function of the concentration ratio of defects in the two- and zero-electron states.
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