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Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide
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10.1063/1.2714001
/content/aip/journal/jap/101/7/10.1063/1.2714001
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/7/10.1063/1.2714001
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

FTIR absorption spectrum of an oxygen-rich GaAs sample at low temperature.

Image of FIG. 2.
FIG. 2.

Axial intensity distribution of the LVM bands observable in a very oxygen-rich ingot.

Image of FIG. 3.
FIG. 3.

Axial intensity distribution of the LVM bands observable in an ingot with medium oxygen concentration.

Image of FIG. 4.
FIG. 4.

Integrated absorption of bands A and B before (“dark”) and after optically induced conversion (“illum.”).

Image of FIG. 5.
FIG. 5.

Analysis of the difference in intensity of bands A and B and the carbon acceptor concentration in the seed end of ingot No. 30772.

Image of FIG. 6.
FIG. 6.

Fine structure of the bands A and B as a function of temperature. Spectra are shifted vertically for clarity.

Image of FIG. 7.
FIG. 7.

Integrated absorption of the bands A and B as a function of temperature. Solid curves serve merely as a guide for the eye.

Image of FIG. 8.
FIG. 8.

Free carrier concentration as a function of the concentration ratio of defects in the two- and zero-electron states.

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/content/aip/journal/jap/101/7/10.1063/1.2714001
2007-04-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/7/10.1063/1.2714001
10.1063/1.2714001
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