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Low energy ion beam assisted deposition of a spin valve
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10.1063/1.2715751
/content/aip/journal/jap/101/7/10.1063/1.2715751
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/7/10.1063/1.2715751

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of a biased target ion beam deposition system. A high flux, low voltage ion source is used to soft sputter a metal target. A hollow cathode electron source is used to form a low energy ion flux for ion assistance during or after metal deposition. It enables the independent control of the ion energy, ion flux, and ion incident angle.

Image of FIG. 2.
FIG. 2.

GMR ratio as a function of Cu spacer layer thickness for Ta spin valve deposited without ion assistance.

Image of FIG. 3.
FIG. 3.

GMR ratio and coupling field as a function of assisting argon ion energy. Simultaneous ion assistance was only applied during the deposition of the part of the spin valve.

Tables

Generic image for table
Table I.

Ion assistance parameters for spin valve with 10.51% GMR ratio.

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/content/aip/journal/jap/101/7/10.1063/1.2715751
2007-04-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low energy ion beam assisted deposition of a spin valve
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/7/10.1063/1.2715751
10.1063/1.2715751
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