Schematic illustration of a biased target ion beam deposition system. A high flux, low voltage ion source is used to soft sputter a metal target. A hollow cathode electron source is used to form a low energy ion flux for ion assistance during or after metal deposition. It enables the independent control of the ion energy, ion flux, and ion incident angle.
GMR ratio as a function of Cu spacer layer thickness for Ta spin valve deposited without ion assistance.
GMR ratio and coupling field as a function of assisting argon ion energy. Simultaneous ion assistance was only applied during the deposition of the part of the spin valve.
Ion assistance parameters for spin valve with 10.51% GMR ratio.
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