(Color online) Schematic of the DG MOSFETs.
(Color online) Gate leakage current density in the [6/2/0.5] device at various gate voltages, from 0.1 to 0.6 V (upward). Temperature: 300 K.
(Color online) Distribution of leakage-current along the gate at various drain biases, (circles), 0.08 V (squares), 0.14 V (diamonds), 0.2 V (up-triangles), and 0.3 V (down-triangles). (a) Weak inversion regime and (b) strong inversion regime .
(Color online) Leakage-current spectral density in the [6/2/0.5] device at two typical values of gate voltage, (a) 0.1 and (b) 0.6 V. Temperature: 300 K.
(Color online) Gate length effect on the leakage current plotted in the strong inversion regime , (lozenges), (squares), and (circles). Temperature: 300 K.
(Color online) (a) Gate leakage current density vs gate voltages in the devices with drain voltage . Temperature: 300 K. (b) Dependence of gate leakage current on the oxide thickness for and .
(Color online) Leakage current in two cases of weakly and heavily doped polysilicon gate. The devices ([6/2/0.5]) are in the same operating state in the weak inversion regime. Temperature: 300 K.
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