1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors
Rent:
Rent this article for
USD
10.1063/1.2716874
/content/aip/journal/jap/101/7/10.1063/1.2716874
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/7/10.1063/1.2716874
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic of the DG MOSFETs.

Image of FIG. 2.
FIG. 2.

(Color online) Gate leakage current density in the [6/2/0.5] device at various gate voltages, from 0.1 to 0.6 V (upward). Temperature: 300 K.

Image of FIG. 3.
FIG. 3.

(Color online) Distribution of leakage-current along the gate at various drain biases, (circles), 0.08 V (squares), 0.14 V (diamonds), 0.2 V (up-triangles), and 0.3 V (down-triangles). (a) Weak inversion regime and (b) strong inversion regime .

Image of FIG. 4.
FIG. 4.

(Color online) Leakage-current spectral density in the [6/2/0.5] device at two typical values of gate voltage, (a) 0.1 and (b) 0.6 V. Temperature: 300 K.

Image of FIG. 5.
FIG. 5.

(Color online) Gate length effect on the leakage current plotted in the strong inversion regime , (lozenges), (squares), and (circles). Temperature: 300 K.

Image of FIG. 6.
FIG. 6.

(Color online) (a) Gate leakage current density vs gate voltages in the devices with drain voltage . Temperature: 300 K. (b) Dependence of gate leakage current on the oxide thickness for and .

Image of FIG. 7.
FIG. 7.

(Color online) Leakage current in two cases of weakly and heavily doped polysilicon gate. The devices ([6/2/0.5]) are in the same operating state in the weak inversion regime. Temperature: 300 K.

Loading

Article metrics loading...

/content/aip/journal/jap/101/7/10.1063/1.2716874
2007-04-13
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/7/10.1063/1.2716874
10.1063/1.2716874
SEARCH_EXPAND_ITEM