Si core level photoemission line shapes.
Deconvolution of the Si line shape for sample d (as an example). The Greek letters designate the following bonding environments: , , , , , layer , , layer , , , .
O core level photoemission line shapes.
Valence band maximum region for samples a and b, with an indication of the extrapolation performed to estimate the top of the valence band.
TEM image of film d over a large sample section, showing the presence of large grains on the surface.
High resolution TEM image of one of the grains revealed in film d. The white arrow indicates the direction of the electron beam scan path during STEM-EELS and STEM-EDS concentration profile acquisition. The panels on the right show Fourier tranforms from the silicon lattice and from the Lu silicate grain. Lattice spacing and plane orientations are shown. The bright field TEM image has been rotated 14.5° clockwise in order to select the maximum size for the grain area from which the Fourier transform has been obtained. Orientations are referred to a horizontal line.
Si and Lu EELS and O EDS profiles of the grain imaged in Fig. 6 along the path represented by the arrow. Regions 1–4 in all three panels correspond to the three regions singled out in the grain in Fig. 6.
Relative intensity of the Si components for the samples; the “Si-related” row refers to the sum of the components originating from the bulk, up-dimer, and second layer atoms.
Relative intensities of the O components for the samples.
Valence band offsets (in eV) for samples b, c, and d, determined according to the two methods described in the text.
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