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Changes in surface topography of amorphous silicon germanium films after light soaking
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10.1063/1.2721944
/content/aip/journal/jap/101/8/10.1063/1.2721944
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/8/10.1063/1.2721944

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM Images of sample (a) before and (b) after 1 h of light soaking. The surface topography changes after light soaking.

Image of FIG. 2.
FIG. 2.

Fluctuating band picture of amorphous silicon films. The inhomogeneous distribution of hydrogen causes a variation in local band gap in these films.

Tables

Generic image for table
Table I.

rms surface roughness of : H films (scan area ) in the annealed state and after 1 h of light soaking as deduced from the analysis of AFM images.

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/content/aip/journal/jap/101/8/10.1063/1.2721944
2007-04-16
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Changes in surface topography of amorphous silicon germanium films after light soaking
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/8/10.1063/1.2721944
10.1063/1.2721944
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