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Microscopic origins of surface states on nitride surfacesa)
a) This paper is based on a talk presented by the authors at the 28th International Conference on the Physics of Semiconductors, which was held 24–28 July 2006, in Vienna, Austria. Contributed papers for that conference may be found in “Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors,” AIP Conference Proceedings No. 893 (AIP, Melville, NY, 2007); see http://proceedings.aip.org/proceedings/confproceed/893.jsp
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