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Microscopic origins of surface states on nitride surfacesa)
a)This paper is based on a talk presented by the authors at the 28th International Conference on the Physics of Semiconductors, which was held 24–28 July 2006, in Vienna, Austria. Contributed papers for that conference may be found in “Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors,” AIP Conference Proceedings No. 893 (AIP, Melville, NY, 2007); see http://proceedings.aip.org/proceedings/confproceed/893.jsp
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10.1063/1.2722731
/content/aip/journal/jap/101/8/10.1063/1.2722731
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/8/10.1063/1.2722731
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Electronic band structures of the (a) (0001); (b) ; (c) (0001); (d) reconstructed surfaces. Gray lines indicate the projected bulk band structure. The zero of energy is set at the bulk VBM. Relevant energy differences between the VBM and surface states (in red) are indicated by arrows. For the structure, with highly dispersive surface states, the Fermi level is also indicated.

Image of FIG. 2.
FIG. 2.

(Color online) Density of states for the stable surface structures found for moderate Ga(In)/N ratios on the polar GaN(InN) (0001) surfaces. (a) GaN: (0001) structure; (b) InN: (0001) structure.

Image of FIG. 3.
FIG. 3.

(Color online) Electronic band structures of the (a) GaN dimer ; (b) GaN dimers ; (c) InN dimer ; and (d) InN dimer reconstructed surfaces. Gray lines indicate the projected bulk band structure. The zero of energy is set at the bulk VBM. Relevant energy differences between the VBM and surface states (in red) are indicated by arrows.

Image of FIG. 4.
FIG. 4.

(Color online) Density of states for the stable surface structures found for moderate Ga(In)/N ratios on the nonpolar GaN(InN) surfaces. (a) GaN dimer structure; (b) InN dimer structure.

Image of FIG. 5.
FIG. 5.

(Color online) Density of states for the stable surface structure (laterally contracted bilayer) found under Ga(In)-rich conditions on the polar (0001) surfaces of (a) GaN and (b) InN.

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/content/aip/journal/jap/101/8/10.1063/1.2722731
2007-04-27
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microscopic origins of surface states on nitride surfacesa)
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/8/10.1063/1.2722731
10.1063/1.2722731
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