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Microscopic origins of surface states on nitride surfacesa)
a)This paper is based on a talk presented by the authors at the 28th International Conference on the Physics of Semiconductors, which was held 24–28 July 2006, in Vienna, Austria. Contributed papers for that conference may be found in “Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors,” AIP Conference Proceedings No. 893 (AIP, Melville, NY, 2007); see http://proceedings.aip.org/proceedings/confproceed/893.jsp
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10.1063/1.2722731
/content/aip/journal/jap/101/8/10.1063/1.2722731
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/8/10.1063/1.2722731
/content/aip/journal/jap/101/8/10.1063/1.2722731
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/content/aip/journal/jap/101/8/10.1063/1.2722731
2007-04-27
2014-11-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microscopic origins of surface states on nitride surfacesa)
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/8/10.1063/1.2722731
10.1063/1.2722731
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