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The schematic picture of the system used in the calculations. Vertical lines indicate the embedding planes.
The area-resistance product AR of the FM(O)∕FM(D)∕FM(O) systems as a function of the thickness of the FM(D) layer for bcc Fe and fcc Ni in the paramagnetic state. The lateral cell sizes were for Fe and for Ni, with edges along the  directions. The error bars denote standard deviations of AR due to the finite number of spin-disorder configurations.
Spin-disorder resistivity of Fe plotted against . The experimental data for were taken from Ref. 2, and those for from Ref. 14.
Spin-disorder resistivity in for paramagnetic bcc Fe and fcc Ni. The calculated values are given for different lateral cell sizes with edges along the  directions. The experimental values are the high-temperature asymptotes taken from Ref. 2.
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