Implantation depth profile simulated using Monte Carlo method.
Transmission MCD spectra of the as-implanted and annealed samples. MCD spectra of the homoepitaxial wafer are compiled in (a). The magnetic fields were applied perpendicular to the sample plane.
Magnetic field dependence of the MCD intensity at the several photon energy points for the as-implanted and the annealed samples at 300 and .
(a) curve at for the annealed sample and (b) ZFC curve with applied magnetic field of . The inset shows vs temperature. The magnetic fields were applied perpendicular to the sample plane.
(a) Cross-sectional HRTEM image of the annealed sample and [(b)–(d)] SAD patterns of each point .
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