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Characterization of Mn-doped prepared by ion implantation
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10.1063/1.2709749
/content/aip/journal/jap/101/9/10.1063/1.2709749
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/9/10.1063/1.2709749
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Implantation depth profile simulated using Monte Carlo method.

Image of FIG. 2.
FIG. 2.

Transmission MCD spectra of the as-implanted and annealed samples. MCD spectra of the homoepitaxial wafer are compiled in (a). The magnetic fields were applied perpendicular to the sample plane.

Image of FIG. 3.
FIG. 3.

Magnetic field dependence of the MCD intensity at the several photon energy points for the as-implanted and the annealed samples at 300 and .

Image of FIG. 4.
FIG. 4.

(a) curve at for the annealed sample and (b) ZFC curve with applied magnetic field of . The inset shows vs temperature. The magnetic fields were applied perpendicular to the sample plane.

Image of FIG. 5.
FIG. 5.

(a) Cross-sectional HRTEM image of the annealed sample and [(b)–(d)] SAD patterns of each point .

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/content/aip/journal/jap/101/9/10.1063/1.2709749
2007-04-30
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of Mn-doped 3C-SiC prepared by ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/9/10.1063/1.2709749
10.1063/1.2709749
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