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Room temperature ferromagnetism in transition metal (V, Cr, Ti) doped
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10.1063/1.2712018
/content/aip/journal/jap/101/9/10.1063/1.2712018
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/9/10.1063/1.2712018
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Unit cell of crystal: One of the two substituted vanadium atoms is at the position labeled 0 and the other two at positions labeled with 1, 2, and 3 in different configurations.

Image of FIG. 2.
FIG. 2.

(Color online) Electronic density of states for the configuration with two V atoms separated by : Ferromagnetic (upper panel) and antiferromagnetic (lower panel) orderings.

Image of FIG. 3.
FIG. 3.

Magnetic hysteretic loops ( at ) for polycrystalline powder samples by sol-gel technique. Inset (a) shows the hysteretic loop for at . Notice that the net intrinsic magnetization for Ti doped sample is two orders of magnitude smaller than for Cr and V doped samples. Inset (b) shows the hysteresis curves at an expanded scale near the origin.

Image of FIG. 4.
FIG. 4.

Magnetic hysteretic loops ( at ) for pulsed laser deposited thin films at 0.1 and oxygen ambient pressures, respectively. (The data presented are after appropriate correction for the diamagnetic term arising from the sapphire substrate.) The inset shows hysteresis curves at an expanded scale near the origin.

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/content/aip/journal/jap/101/9/10.1063/1.2712018
2007-05-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature ferromagnetism in transition metal (V, Cr, Ti) doped In2O3
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/9/10.1063/1.2712018
10.1063/1.2712018
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