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Substitutional B in Si: Accurate lattice parameter determination
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Image of FIG. 1.
FIG. 1.

Literature fictious cubic B lattice parameters organized according the Si B-doping strategy (closed symbols). Also a theoretical prediction is reported (open symbol).

Image of FIG. 2.
FIG. 2.

Schematic representation of the SPE samples: epitaxial growth of a alloy barrier and of a Si cap layer, followed by amorphizing Si implants, multiple B implants, and solid phase regrowth. The dashed line marks the amorphous/crystal interface.

Image of FIG. 3.
FIG. 3.

(004) (a) and (224) (b) RSMs of the B doped sample. Note the perfect alignment between the substrate and the B-doped layer nodes in both RSMs.

Image of FIG. 4.
FIG. 4.

(a) RC of the sample (circles) with its best simulation (continuous line). (b) Corresponding perpendicular strain profile used to generate the best simulation (continuous line) and B chemical profile (dashed line) of the same sample.

Image of FIG. 5.
FIG. 5.

determinations for the SPE samples neglecting (open squares) or taking into account the correction (open circles: ; open triangles: of Ref. 17; open stars: of Ref. 16). The dashed line represents the corresponding mean value of open triangles . Literature data about epitaxial materials are also reported [closed star (see Ref. 15), cross (see Ref. 12), closed circle (see Ref. 11), closed diamond (see Ref. 13), closed up triangle (see Ref. 14), and closed down triangle (see Ref. 10)].


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Table I.

Summary of literature experimental values and theoretical calculations of and (lower part) of the average values and standard deviation of literature data grouped by Si B-doping strategy.

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Table II.

Maximum B concentrations of the SPE samples, their B substitutional fractions, and the corresponding values.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Substitutional B in Si: Accurate lattice parameter determination