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Effects of ZnO buffer layers on the fabrication of GaN films using pulsed laser deposition
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10.1063/1.2730573
/content/aip/journal/jap/101/9/10.1063/1.2730573
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/9/10.1063/1.2730573

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of GaN films on (a) Si substrate, (b) amorphous ZnO buffer layers, (c) crystalline ZnO layers after annealing at 950 °C, and (d) as-deposited GaN films on crystalline ZnO layers.

Image of FIG. 2.
FIG. 2.

XRD patterns of GaN films on crystalline ZnO buffer layers annealed in ammonia ambience at 900 °C, 950 °C, 1000 °C, and 1050 °C.

Image of FIG. 3.
FIG. 3.

XRD patterns of GaN films at different times annealed at 950 °C.

Image of FIG. 4.
FIG. 4.

FTIR spectrum of the as-deposited GaN films on crystalline ZnO buffer layers.

Image of FIG. 5.
FIG. 5.

FTIR spectra of the annealed GaN films deposited on different layers.

Image of FIG. 6.
FIG. 6.

(a)–(c) shows the morphologies of the GaN films on different layers [(a) amorphous ZnO buffer layers; (b) Si substrate; and (c) crystalline ZnO layers] annealed at 950 °C, while (d) shows the as-deposited GaN films on crystalline ZnO buffer layers.

Tables

Generic image for table
Table I.

The FWHM and intensity of (002) peak for the XRD curve in Fig. 1.

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/content/aip/journal/jap/101/9/10.1063/1.2730573
2007-05-10
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of ZnO buffer layers on the fabrication of GaN films using pulsed laser deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/9/10.1063/1.2730573
10.1063/1.2730573
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