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Ballistic electron and photocurrent transport in Au-molecular layer-GaAs diodes
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10.1063/1.2748865
/content/aip/journal/jap/102/1/10.1063/1.2748865
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/1/10.1063/1.2748865

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Nominal diode structures with the molecular layers highly magnified. The gold layers were actually about eight times thicker than the molecular layer: (a) Au/C8DT/GaAs, (b) Au/C16MT/GaAs, (c) , and (d) .

Image of FIG. 2.
FIG. 2.

(Color online) [(a)–(f)] Typical STM (left) and BEEM (right) corresponding images (tip bias of , tip current of , and scan area of ). STM height scale and BEEM current scale: Reference (panel a) and (panel b) ; Au/C8DT/GaAs (panel c) and (panel d) ; Au/C16MT/GaAs (panel e) and (panel f) . (g) Plots of averaged BEEM spectra from these diodes. The spectra in the left panel are replotted in the right at a magnified current and voltage scale to emphasize differences in the threshold regions: (black squares), Au/C8DT/GaAs (blue crosses), and Au/C16MT/GaAs (red triangles).

Image of FIG. 3.
FIG. 3.

(Color online) [(a)–(d)] Typical STM (left) and BEEM (right) corresponding images from sandwich diodes (tip bias of , tip current of , and scan area of ). STM height scale and BEEM current scale: (panel a) and (panel b) ; (panel c) and (panel d) . Plots in (e) show averaged BEEM spectra from these diodes. (blue crosses), (red triangles), and (black squares). The spectra in the left panel are replotted in the right at a magnified current and voltage scale to emphasize differences in the threshold regions.

Image of FIG. 4.
FIG. 4.

(Color online) Plots of averaged RBEEM spectra compared to replots of their corresponding BEEM spectra (solid symbols or blue crosses). (Panel a) (open black squares) and Au/C16MT/GaAs (open red triangles) magnified 100 times. (Panel b) Au/C8DT/GaAs (open magenta circles).

Image of FIG. 5.
FIG. 5.

(Color online) Auger compositional depth profiles obtained with Ar ions: (a) Au/C8DT/GaAs and (b) Au/C16MT/GaAs.

Image of FIG. 6.
FIG. 6.

(Color online) High-resolution, cross-sectional TEM images obtained with the beam parallel to a substrate ⟨110⟩ direction [down a (110) pole]: (a) Au/C8DT/GaAs and (b) Au/C16MT/GaAs.

Tables

Generic image for table
Table I.

Summary of average electrical results from BEEM and current-voltage measurements as a function of sample type. Listed are the contact structure, the ideality factor and barrier height , the BEEM threshold voltage , and the percentage ratio of BEEM transmission current to STM tip tunneling current, measured at a tip bias of .

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/content/aip/journal/jap/102/1/10.1063/1.2748865
2007-07-02
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ballistic electron and photocurrent transport in Au-molecular layer-GaAs diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/1/10.1063/1.2748865
10.1063/1.2748865
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