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Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates
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10.1063/1.2749281
/content/aip/journal/jap/102/1/10.1063/1.2749281
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/1/10.1063/1.2749281
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagrams of sample structure and energy bands, (b, c) (105) x-ray RSMs of InGaN MQWs grown on (b) sapphire and (c) GaN substrates, respectively.

Image of FIG. 2.
FIG. 2.

PL and PLE spectra obtained at 10 K for InGaN MQWs grown on sapphire and GaN substrates, respectively. The PLE detection energies of the MQWs grown on sapphire and GaN substrates were 3.09 and 3.13 eV, respectively. A Stokes-like shift of the PL emission arising from MQWs with respect to its PLE absorption edge is larger for InGaN MQWs on a sapphire substrate as compared to the case of a GaN substrate.

Image of FIG. 3.
FIG. 3.

Normalized integrated PL intensity of MQW emission as a function of from MQWs grown on sapphire and GaN substrates, respectively, wherein activation energies of and were estimated from the Arrhenius plot. The inset shows PL spectra obtained in the temperature range from 10 to 300 K.

Image of FIG. 4.
FIG. 4.

(a,b) Temporal evolution of MQW emission obtained at different temperatures for MQW samples grown on sapphire and GaN substrates, respectively. Both the temporal curves are normalized and vertically shifted for comparison. (c, d) PL lifetime and radiative and nonradiative lifetime ( and ) deduced from the temperature-dependent TRPL data and integrated PL intensity.

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/content/aip/journal/jap/102/1/10.1063/1.2749281
2007-07-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/1/10.1063/1.2749281
10.1063/1.2749281
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