(a) Schematic diagrams of sample structure and energy bands, (b, c) (105) x-ray RSMs of InGaN MQWs grown on (b) sapphire and (c) GaN substrates, respectively.
PL and PLE spectra obtained at 10 K for InGaN MQWs grown on sapphire and GaN substrates, respectively. The PLE detection energies of the MQWs grown on sapphire and GaN substrates were 3.09 and 3.13 eV, respectively. A Stokes-like shift of the PL emission arising from MQWs with respect to its PLE absorption edge is larger for InGaN MQWs on a sapphire substrate as compared to the case of a GaN substrate.
Normalized integrated PL intensity of MQW emission as a function of from MQWs grown on sapphire and GaN substrates, respectively, wherein activation energies of and were estimated from the Arrhenius plot. The inset shows PL spectra obtained in the temperature range from 10 to 300 K.
(a,b) Temporal evolution of MQW emission obtained at different temperatures for MQW samples grown on sapphire and GaN substrates, respectively. Both the temporal curves are normalized and vertically shifted for comparison. (c, d) PL lifetime and radiative and nonradiative lifetime ( and ) deduced from the temperature-dependent TRPL data and integrated PL intensity.
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