The dependence of the absorption coefficient of PFB (dash-dot line) and F8BT (solid line) on wavelength (Ref. 17).
The different types of architectures used in this research. Both domain types lay in the plane and are infinite in the direction. The difference between the first two structures is the presence (b) or absence (a) of mirror at the end of the polymer layer. (c) and (d) show the two possible bilayer structures for the polymer. A detailed description of these structures is given in the text.
The dependence of on the structure period, , and on the excitation wavelength for different film thicknesses and different device structures. Film thickness 50 nm (a) and (b), 100 nm (c) and (d), and 200 nm (e) and (f). (a), (c), and (e) are without a mirror while (b), (d), and (f) are with a mirror at the end of the device. Enhanced absorption is indicated by brighter colors, with values of as indicated by the corresponding bars.
The dependence of the ratio between the absorption in a lateral periodic structure and a bilayer structure, , on the structure period, , and on the excitation wavelength for film thicknesses of 50 nm and different device structures. Structures without a mirror with “FP” (a) and “PF” (b) configuration. Structures with a mirror with “FP” (c) and “PF” (d) configuration. Enhanced absorption is indicated by brighter colors, with values of as indicated by the bars.
The log of the magnitude of the Poynting vector and its direction along the first 300 nm of the devices. Excitation wavelength 360 (a) and 440 nm (b).
The amplitude of at the vicinity of the PFB/F8BT interface (PFB at the top and F8BT at the bottom) for excitation wavelength of 500 nm. In resonance (a) and out of resonance, (b).
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